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Investigation of Deposition Parameters Dependence on Sputtered Cu2ZnSnSe4 Thin Films Properties

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Abstract:

Cu2ZnSnSe4(CZTSe) thin films were deposited by sputtering process using powder compacted target of CuSe, ZnSe and SnSe on Corning 1737 glass for Indium-free thin film solar cell application. Film composition,structure and properties were investigated by varying deposition parameters,such as substrate temperature,film thickness and RF power in order to deposit films with a stoichiometric composition and single phase of CZTSe. At an optimal condition of experiment,substrate temperature toward 1500 C,RF power 75W, CZTSe films near stoichiometric composition with a polycrystalline stannite single phase were successfully deposited. Film thickness was little dependency with structure and composition except optical transmittance of the films. And it was observed to have a absorption coefficient of up to 104 cm-1, band gap energy of 1.5 eV, carrier concentration in order of 1019 cm-3, mobility of 100 cm2V-1s-1 and resistivity of 10-1-103 Ωcm.It was also showed that all films were identified as p-type semiconductor.

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Periodical:

Advanced Materials Research (Volume 1125)

Pages:

143-147

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1125.143

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Online since:

October 2015

Authors:

Kyoo Ho Kim*, Rachmat Adhi Wibowo, Nokeun Park, Fianti Fianti, Ersan Y. Muslih

Keywords:

Cu2ZnSnSe4, Deposition Parameter, Property, Sputtering, Thin Film

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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