The Influence of Electrodes Deposition on the Interface and Dielectric Characteristics of Polymer Gate for Thin Films Transistors

Abstract:

The paper presents some results on the effect of the metal electrode deposition on the electrical performance of amorphous polymthylmetacrylate (PMMA) thin films, measured in a MIM structure consisting of metal (Al)-insulator (PMMA)-metal (Ta). Aluminium (Al) electrode was deposited by physical vapor deposition method (PVD) on the top of PMMA film with the deposition rate of 5 and 10Å/s. The effect of aluminium deposition rate and post deposition annealing temperature on the morphology of the interface between Al electrode (100 or 300 nm thick) and PMMA thin film (40 or 70 nm thick) has been investigated by cross-section scanning electron microscopy (SEM). Based on SEM data, I-V characteristic measurements and dielectric constant values of insulating films, the deposition parameters of Al top-electrode was optimised. Our results showed that when the deposition of the Al electrode take place at a rate of 10 Å/s, no inter-diffusion or interfacial reaction at the interface between Al electrode and PMMA films were observed and the best delectric parameters of PMMA thin film were measured, which led to the best dielectric performance of PMMA layer in TFT configuration.

• Periodical: Advanced Materials Research (Volume 1143)
• Pages: 227-232
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1143.227
• Online since: February 2017
• Authors: Elena Emanuela Herbei, Michael P.M. Jank, Susanne Oertel, Laurentiu Frangu, Viorica Mușat*
• Keywords: Aluminium Electrode, Gate Dielectric, MIM Structure, PMMA Thin Film, PVD Deposition, Thin Film Transistor

References

[1] Na M and Rhee S W (2006)Org Electron 7 205-12.

[2] W. Weinreich et al., Microelectron. Eng. 86 (2009) 1826–1829.

[3] H Q Zhang, Y Jin, and Y Qiu, The optical and electrical characteristics of PMMA film prepared by spin coating methodMaterials Science and Engineering 87 (2015).

[4] W. S. Kim, Y. K. Moon, S. Lee, B. W. Kang, T. S. Kwon, K. T. Kim, andJ. W. Park: Phys. Status Solidi: Rapid Res. Lett. 3 (2009) 239.

[5] Cong Wang* and Nam-Young Kim , Fabrication of Metal-insulator-metal Capacitors with SiNx Thin Films Deposited by Plasma-enhanced Chemical Vapor Deposition Transactions On Electrical And Electronic Materials Vol. 10, No. 5, October 25, (2009).

DOI: 10.4313/teem.2009.10.5.147

[6] J. Puigdollers, C. Voss, I. Martin, A. Rosella, M. Vetter, R. Alcubilla, J. Non-Cryst. Solids 338–340 (2004) 617.

[7] W. S. Kim, Y. K. Moon, K. T. Kim, J. H. Lee, B. D. Ahn, and J. W. Park: Thin Solid Films 518 (2010) 6357.

[8] Y. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono: Thin Solid Films 516 (2008) 5899.

DOI: 10.1016/j.tsf.2007.10.051

[9] H. H. Kim, J. Y. Moon, Y. W. Heo, and H. S. Lee: Thin Solid Films 518(2010) 6348.

[10] Liu Xiang, Bai Yu, Zhu Wen-qing, Jing Xue-yin, Zhang Zhi-lin, Organic thin film transistors with PMMA modified insulator, Optoelectronics Letters, November 2007, Volume 3, Issue 6, pp.435-437.

DOI: 10.1007/s11801-007-7067-2

[11] B. Chandar Shekara*, S. Sathisha & R. Sengodenb, Spin coated nano scale PMMA films for organic thin film transistors, Physics Procedia 49 ( 2013 ) 145 – 157.

DOI: 10.1016/j.phpro.2013.10.021

[12] M. Morales-Acosta, M. Quevedo-López, B. Gnade, and R. Ramírez-Bon: Journal of Sol-Gel Science and Technology 58 (2010) 218.

DOI: 10.1007/s10971-010-2380-9

[13] S. Li, M. M. Lin, M. S. Toprak, D. K. Kim, and M. Muhammed: NANO REVIEWS, (2010).

[14] X. Sun, X. Chen, X. Liu, and S. Qu: Applied Physics B: Lasers and Optics (2010) 1.

[15] N. G. Semaltianos: Microelectronic Journal 38 (2007) 754.

[7] T. S. Huang, Y. K. Su, and P. C. Wang: Japanese Journal of Applied Physics 47 (2008) 3185.

[16] J. Puigdollers, C. Voz, I. Martín, M. Vetter, A. Orpella, and R. Alcubilla: Synthetic Metals 146 (2004) 355.

DOI: 10.1016/j.synthmet.2004.08.027

[17] Effect of annealing temperature on electrical properties of poly (methyl methacrylate): titanium dioxide nanocomposite films using spin coating deposition technique L N Ismail1 , Z Habibah1 , S H Herman1 and M Rusop2 1 NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM) , 40450 Shah Alam, Selangor, Malaysia 2 NANO-SciTech Centre (NST), Institute of Applied Sciences, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia.

DOI: 10.35940/ijrte.d5216.118419

[18] A. T. Sellinger, A. H. MArtin, and J. M. Fitz-Gerald: Thin Solid Films 516 (2008) 6033.

[19] L. N. Ismail, S. A. Farahiyah, Z. Habibah, S. H. Herman, and M. Rusop: IEEE Symposium in Humanities, Science and Engineering Research (SHUSER) (2012) 259.

[20] V. D. Costa, M. Romeo, and F. Bardou: Journal of Magnetism and Magnetic Material 258 (2003) 90.

[21] S. M. Sze, Physics of Semiconductor Devices: Wiley Inter-Science Publication, (1981).

[22] Morales-Acosta, M.D.; Quevedo-Lopez, M.A.; Alshareef, H.N.; Gnade, B.; Ramirez-Bon, R.; Mater Sci Forum, 2010, 644, 25.