Microstructure and Crystallization Mechanism of (GeSbSn)100-xFex Phase Change Optical Recording Films

Sin Liang Ou; Po Cheng Kuo; Shih Hsien Ma; Chih Long Shen; Don Yau Chiang; Wei Tai Tang

doi:10.4028/www.scientific.net/AMR.123-125.731

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 123-125Microstructure and Crystallization Mechanism of...

Microstructure and Crystallization Mechanism of (GeSbSn)_100-xFe_x Phase Change Optical Recording Films

Abstract:

The (GeSbSn)100-xFex films (x = 0 ~ 12.9) were deposited on nature oxidized silicon wafer, and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the (GeSbSn)100-xFex film is 100 nm. We have studied the effects of Fe addition on the crystallization kinetics, and microstructures of the GeSbSn recording film. The crystallization temperatures of (GeSbSn)100-xFex films with x = 0, 7.1, 9.1, and 12.9 were found to be 225 °C, 198 °C, 167 °C, and 165 °C, respectively. The crystallization activation energies of (GeSbSn)100-xFex films with x = 0, 7.1, 9.1, and 12.9 are about 1.74 eV, 1.15 eV, 0.81 eV, and 0.52 eV, respectively.

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Advanced Materials Research (Volumes 123-125)

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731-734

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https://doi.org/10.4028/www.scientific.net/AMR.123-125.731

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Online since:

August 2010

Authors:

Sin Liang Ou, Po Cheng Kuo, Shih Hsien Ma, Chih Long Shen, Don Yau Chiang, Wei Tai Tang

Keywords:

(GeSbSn)_100-xFe_X Films, Microstructure, Phase Change Optical Recording

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