Microstructure and Crystallization Mechanism of (GeSbSn)100-xFex Phase Change Optical Recording Films
The (GeSbSn)100-xFex films (x = 0 ~ 12.9) were deposited on nature oxidized silicon wafer, and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the (GeSbSn)100-xFex film is 100 nm. We have studied the effects of Fe addition on the crystallization kinetics, and microstructures of the GeSbSn recording film. The crystallization temperatures of (GeSbSn)100-xFex films with x = 0, 7.1, 9.1, and 12.9 were found to be 225 °C, 198 °C, 167 °C, and 165 °C, respectively. The crystallization activation energies of (GeSbSn)100-xFex films with x = 0, 7.1, 9.1, and 12.9 are about 1.74 eV, 1.15 eV, 0.81 eV, and 0.52 eV, respectively.
Joong Hee Lee
S. L. Ou et al., "Microstructure and Crystallization Mechanism of (GeSbSn)100-xFex Phase Change Optical Recording Films", Advanced Materials Research, Vols. 123-125, pp. 731-734, 2010