The CMP by Polishing with GiP Dressed by BODD

James C. Sung; Ming Yi Tsai; Cheng Shiang Chou; Pei Lum Tso; Ying Tung Chen

doi:10.4028/www.scientific.net/AMR.126-128.1013

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 126-128The CMP by Polishing with GiP Dressed by BODD

The CMP by Polishing with GiP Dressed by BODD

Abstract:

Due to the continual improvement of CMP technologies, and the need for polishing delicate wafers at high speed, graphite impregnated pads (GiP) dressed by brazed organic dia mond disks (BODD) can double the throughput of wafer-pass at the reduced cost of ownership (CoO). The increased polishing rate is due to the act of nano graphite particles that absorb slurry. The nano graphite particles coated with chemical and abrasive can achieve high removal rate without causing scratches on the wafer. In addition, nano graphite particles do not stick to wafer surfaces, so they can be cleaned easily. BODD can uniquely dress GiP to create slurry channels so the pore free pad is not bottlenecked by slurry supply. This paper also demonstrated the low stress polishing by applying ultrasound during the CMP process.

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Periodical:

Advanced Materials Research (Volumes 126-128)

Pages:

1013-1018

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.126-128.1013

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Online since:

August 2010

Authors:

James C. Sung, Ming Yi Tsai, Cheng Shiang Chou, Pei Lum Tso, Ying Tung Chen

Keywords:

CMP, Graphite, Pad, Pad Conditioner, Ultrasound (US)

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References

[1] J.C. Sung, P.L. Tso, M.Y. Tsai, Y.T. Chen, P.H. Chen, S.C. Hu and M. Sung : The Black Pad with Graphite Impregnation for CMP (ICPT 2009).

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DOI: 10.1149/1.3360677

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