Slurry Preparation: A Key to Upgrade CMP Efficiency

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Abstract:

Slurry preparation is of paramount importance in chemical mechanical planarization (CMP) process. It couples the combination effects of chemical and mechanical ones. In this paper, the characteristics of the slurry particles used in CMP are firstly modeled, which includes the size and the concentration with primary priority. And then, the model is validated by experiments during hard disk wafer polishing. The slurry prepared contributes to a high quality hard disk surface processed with CMP, which leads to low waviness Wa and roughness Ra with suitable material removal rate (MRR) as well. The study will surely lay a feasible foundation to the CMP mechanism.

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Periodical:

Advanced Materials Research (Volumes 148-149)

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19-24

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October 2010

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Lei and J. B. Luo JB: Wear Vol. 257(2004), p.461.

Google Scholar

[2] E. Hartmannsgruber, G. Zwicker and K. Beekmann: Microelectronic engineering. Vol. 50(2000), p.53.

Google Scholar

[3] A. E. Braun: Semiconductor Int. Vol. 11(2001), p.54.

Google Scholar

[4] L. Chang: ASME J. Tribol. Vol. 129(2007), p.436.

Google Scholar

[5] G. Nanz and L. E. Camilletti: IEEE Trans Semiconductor Manufacturing Vol. 8(1995), p.382.

Google Scholar

[6] C. H. Zhang, J. B. Luo, J. Q. Liu, and Y. P. Du : Chinese Sci. Bulletin. Vol. 51(2006), p.2281.

Google Scholar

[7] J. Q. Zhang, C. H. Zhang: Chinese Sci. Bulletin Vol. 53(2008), p.3746.

Google Scholar

[8] C. H. Zhang and W. Ye: Proc. Int. Conf. Integration & Commercialization of Micro & Nanosystems 2007 p.1319.

Google Scholar

[9] S. S. Park, C. H. Cho and Y. Ahn: Tribol Int. Vol. 33(2000), p.723.

Google Scholar

[10] C. H. Zhang, J. B. Luo and S. Z. Wen: Lubri. Eng. 6(2004) p.31 (in Chinese).

Google Scholar

[11] G. S. Grover, H. Liang, S. Ganeshkumar and W. Fortino: Wear. Vol. 214(1998), p.10.

Google Scholar

[12] C. H. Zhang, J. B. Luo and S. Z. Wen: Tsinghua Sci. Technol. 9(2004), p.270.

Google Scholar

[13] S. H. Chang: Microelectron Eng. Vol. 77(2005), p.76.

Google Scholar

[14] S. H. Chang: Microelectron Eng. Vol. 82(2005), p.136.

Google Scholar

[15] J. Keleher, X. Shi, Y. Lin and Y. Li: Proc. Advanced Metallization Conference, 2002, p.687.

Google Scholar

[16] C. H. Zhang, J. B. Luo and S. Z. Wen: Acta Physica Sinica. Vol. 54(2005), p.2123(in Chinese).

Google Scholar

[17] C. H. Zhang, J. B. Luo and S. Z. Wen SZ: Progr Nat Sci. Vol. 14(2004), p.81.

Google Scholar

[18] K. Nicholes, R. Singh, D. Grant and M. Litchy: Semiconductor Int. Vol. 24(2001), p.201.

Google Scholar