Nano-Al2O3 Film Prepared on Porous Silicon by Sol-Gel Method
We report the structural and optical properties of a-Al2O3 film grown on porous silicon substrate using sol-gel method. The results indicated that a-Al2O3 film were grown after it sintering at 1200 °C for 1 hour and the scanning electron microscopy image shows the a-Al2O3 film has a nanostructure. From the photoluminescence spectrum, it shows that a narrow purple emission peak. This proved porous silicon is a good substrate to grow a-Al2O3 film.
Xianghua Liu, Zhengyi Jiang and Jingtao Han
F. R. Zhong et al., "Nano-Al2O3 Film Prepared on Porous Silicon by Sol-Gel Method", Advanced Materials Research, Vols. 148-149, pp. 841-844, 2011