Nano-Al2O3 Film Prepared on Porous Silicon by Sol-Gel Method

Fu Ru Zhong; Chang Jun Tie; Xiao Yi Lv; Jia Qing Mo; Zhen Hong Jia; Tao Jiang

doi:10.4028/www.scientific.net/AMR.148-149.841

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 148-149Nano-Al2O3 Film Prepared on Porous Silicon by...

Nano-Al₂O₃ Film Prepared on Porous Silicon by Sol-Gel Method

Abstract:

We report the structural and optical properties of a-Al2O3 film grown on porous silicon substrate using sol-gel method. The results indicated that a-Al2O3 film were grown after it sintering at 1200 °C for 1 hour and the scanning electron microscopy image shows the a-Al2O3 film has a nanostructure. From the photoluminescence spectrum, it shows that a narrow purple emission peak. This proved porous silicon is a good substrate to grow a-Al2O3 film.

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Advanced Materials Research (Volumes 148-149)

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841-844

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https://doi.org/10.4028/www.scientific.net/AMR.148-149.841

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Online since:

October 2010

Authors:

Fu Ru Zhong, Chang Jun Tie, Xiao Yi Lv, Jia Qing Mo, Zhen Hong Jia, Tao Jiang

Keywords:

Photoluminescence (PL), Porous Silicon (PS), Sol-Gel (SG), X-Ray Diffraction (XRD)

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