Nano-Al2O3 Film Prepared on Porous Silicon by Sol-Gel Method

Abstract:

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We report the structural and optical properties of a-Al2O3 film grown on porous silicon substrate using sol-gel method. The results indicated that a-Al2O3 film were grown after it sintering at 1200 °C for 1 hour and the scanning electron microscopy image shows the a-Al2O3 film has a nanostructure. From the photoluminescence spectrum, it shows that a narrow purple emission peak. This proved porous silicon is a good substrate to grow a-Al2O3 film.

Info:

Periodical:

Advanced Materials Research (Volumes 148-149)

Edited by:

Xianghua Liu, Zhengyi Jiang and Jingtao Han

Pages:

841-844

DOI:

10.4028/www.scientific.net/AMR.148-149.841

Citation:

F. R. Zhong et al., "Nano-Al2O3 Film Prepared on Porous Silicon by Sol-Gel Method", Advanced Materials Research, Vols. 148-149, pp. 841-844, 2011

Online since:

October 2010

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Price:

$35.00

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