Study and Preparation of Ti-Doped ZnO Thin Films by Using Chemical Bath Deposition
Effect of thermal treatments on the structural and electrical properties of the chemical bath deposition derived Ti-doped ZnO thin films are studied. XRD results show that the annealed Ti-doped ZnO films with wurtzite structure are randomly oriented. Crystallite structure, carrier concentration, resistivity and mobility are found to be dependent on the treatment temperature. At a treatment temperature of 100°C, the Ti-doped ZnO film possesses a carrier concentration of 1.3×1020 cm-3, a resistivity of 3×10-3 Ω-cm, and a mobility of 15 cm2/Vs.
Jinglong Bu, Zhengyi Jiang and Sihai Jiao
C. H. Hsu et al., "Study and Preparation of Ti-Doped ZnO Thin Films by Using Chemical Bath Deposition", Advanced Materials Research, Vols. 150-151, pp. 252-256, 2011