Study and Preparation of Ti-Doped ZnO Thin Films by Using Chemical Bath Deposition

Abstract:

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Effect of thermal treatments on the structural and electrical properties of the chemical bath deposition derived Ti-doped ZnO thin films are studied. XRD results show that the annealed Ti-doped ZnO films with wurtzite structure are randomly oriented. Crystallite structure, carrier concentration, resistivity and mobility are found to be dependent on the treatment temperature. At a treatment temperature of 100°C, the Ti-doped ZnO film possesses a carrier concentration of 1.3×1020 cm-3, a resistivity of 3×10-3 Ω-cm, and a mobility of 15 cm2/Vs.

Info:

Periodical:

Advanced Materials Research (Volumes 150-151)

Edited by:

Jinglong Bu, Zhengyi Jiang and Sihai Jiao

Pages:

252-256

DOI:

10.4028/www.scientific.net/AMR.150-151.252

Citation:

C. H. Hsu et al., "Study and Preparation of Ti-Doped ZnO Thin Films by Using Chemical Bath Deposition", Advanced Materials Research, Vols. 150-151, pp. 252-256, 2011

Online since:

October 2010

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Price:

$35.00

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