Room-Temperature Electrical Conductivity Property of Si3N4/TiN Composite Ceramics

Shu Hui Zhang; Zhi Qiang Kang; Qing Lu

doi:10.4028/www.scientific.net/AMR.150-151.257

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 150-151Room-Temperature Electrical Conductivity Property...

Room-Temperature Electrical Conductivity Property of Si₃N₄/TiN Composite Ceramics

Abstract:

Room-temperature electrical conductivity property of Si3N4/TiN composite ceramics fabricated by Si3N4 powders from iron ore tailing and high titanium slag was investigated. Si3N4/TiN composite ceramics were machined by electrical discharge machining. The results show that the minimum amount of TiO2 in initial raw materials is about 20wt% for the formation of electroconductive network in the composites, of which the electric resistivity is 4.25×10-2•cm. The electric resistivity decreases slightly with increasing the sintering temperature. Surface roughness enhances significantly with the speed of the electrical discharge machining rising.

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Periodical:

Advanced Materials Research (Volumes 150-151)

Pages:

257-261

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.150-151.257

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Online since:

October 2010

Authors:

Shu Hui Zhang, Zhi Qiang Kang, Qing Lu

Keywords:

Composite Ceramics, Electric Discharge Machining (EDM), Electrical Conductivity Property, Si₃N₄/TiN

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