Determination of Thickness for the Individual Layer of Strained P-Type Al0.11Ga0.89NGaN Superlattice by High Angle Annular Dark Field Scanning Transmission Electron Microscopy

Hui Liao; Wei Hua Chen; Fen Fen Wei; Juan Hou

doi:10.4028/www.scientific.net/AMR.152-153.879

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 152-153Determination of Thickness for the Individual...

Determination of Thickness for the Individual Layer of Strained P-Type Al_0.11Ga_0.89NGaN Superlattice by High Angle Annular Dark Field Scanning Transmission Electron Microscopy

Abstract:

AlGaN/GaN superlattice are the important structure of optoelectronic devices such as light-emitting diodes and laser diodes. The nanostructure of the superlattice can greatly influences the optical electrical properties of final LD and LED . It is impossible to evaluate their thickness by TEM when it’s aluminum component lower than 14%.We investigated the nanostructure of strained p-type Al0.11Ga0.89N/GaN superlattice grown on sapphire by high-angle annular dark-field scanning transmission electron microscopy(HAADF-STEM).By an average filtering technique, the thickness of the AlGaN layers and GaN layers were determined to be 2.409±0.092 nm and 2.371±0.062 nm from the HAADF-STEM images, respectively.