The surface of the wafer is easy to be polluted by the organic pollution material. The supercritical fluid extraction technology works well in extracting organic pollution material. Whether the extraction process influences the surface performance of the wafer can be determined through the SEM(scanning electron microscope), AFM (atomic force microscope), and XPS (X-ray photoelectron spectroscopy). Compare the feature and the electronic structure of the wafer before and after supercritical CO2 extraction to get how supercritical CO2 extraction process influences the wafer surface performance. The conclusion helps to determine whether the extraction technology can be applied in the wafer surface cleaning technology. Tests show that supercritical CO2 extraction process almost does not influence the surface performance of the wafer, and, the supercritical CO2 extraction technology has a good prospect in the wafer cleaning.