Sapphire-SiO2 Solid-Phase Reaction of Polishing Proving Research

Zhao Zhong Zhou; Zhen Li; Qian Fa Deng; Ji Cui Wang; Ju Long Yuan

doi:10.4028/www.scientific.net/AMR.189-193.4053

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 189-193Sapphire-SiO2 Solid-Phase Reaction of Polishing...

Sapphire-SiO₂ Solid-Phase Reaction of Polishing Proving Research

Abstract:

The solid-phase reaction experiment and principle were introduced. 1000# SiO₂ micromist and CaO powder were used polishing sapphire, with polishing pressure 7.5kPa，polishing speed 60r/min and 40r/min. The process of polishing was separated every 120 minutes. The surface appearance and roughness will be survey in each part. Non-surface-scratch will be achieved after 600min of polishing. The roughness (Ra) was decreased from 395nm to 7nm. Rmax was decreased from 2.98μm to 0.05μm. Rt was decreased from 3.34μm to 0.05μm. Through the analysis of the experimental data of XRD, kyanite phase map and diffraction pattern fitting degree. The fact that quality of sapphire’s surface was improved by using this approach has been proved.

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Periodical:

Advanced Materials Research (Volumes 189-193)

Pages:

4053-4058

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.189-193.4053

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Online since:

February 2011

Authors:

Zhao Zhong Zhou, Zhen Li, Qian Fa Deng, Ji Cui Wang, Ju Long Yuan

Keywords:

Sapphire Wafer, SiO₂, Solid-Phase Reaction, X-Ray Diffraction (XRD)

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