Growth of Double-Side Tl-2212 Thin Film on CeO2-Buffered MgO Substrate

Qing Lian Xie; Yu Ting Zhang; Feng Cai Fang; Guo Hua Huang; Lu Ji; Xin Jie Zhao; Lan Fang; Shao Lin Yan

doi:10.4028/www.scientific.net/AMR.194-196.2384

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 194-196Growth of Double-Side Tl-2212 Thin Film on...

Growth of Double-Side Tl-2212 Thin Film on CeO₂-Buffered MgO Substrate

Abstract:

The double-side Tl-2212 films were fabricated on CeO₂-buffered MgO substrates by dc magnetron sputtering and post-annealing method. The RF magnetron sputtering technology was used to grow CeO₂ buffer layers. XRD and SEM measurements showed that the CeO₂ films on annealed MgO substrates were highly c-axis orientation, and the Tl-2212 superconducting films on both sides had similar morphology and crystalline structure. For both sides of Tl-2212 films, the critical transition temperatures (Tc) were above 106 K, and the critical current densities (J_c) were above 2.2 MA/cm² (77 K, 0 T).

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Periodical:

Advanced Materials Research (Volumes 194-196)

Pages:

2384-2387

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.194-196.2384

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Online since:

February 2011

Authors:

Qing Lian Xie, Yu Ting Zhang, Feng Cai Fang, Guo Hua Huang, Lu Ji, Xin Jie Zhao, Lan Fang, Shao Lin Yan

Keywords:

CeO₂ Film, MgO Substrate, Tl-2212 Superconducting Thin Film

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