Influence of Sputtering Power of Te and Annealing on Sb-Te Thin Films Fabricated by RF and DC Co-Sputtering

Abstract:

Article Preview

Antimony and tellurium were deposited on K9 glass via direct current and radio frequency magnetron co-sputtering. Antimony telluride thermoelectric thin films were simultaneously synthesized without post treatment. The influence of the sputtering power of Te and annealing of Sb-Te fabricated by magnetron sputtering were investigated. The maximum Seebeck coefficient of Sb-Te film was 212 μV/K which was obtained at the sputtering power of Sb 4W and Te 60W separately. When annealed at 300 °C, the electrical resistivity and Seebeck coefficient of the film are 6.67x104 S/m and 119 μV/K. The power factor increased to the highest value of 9.4×10-4 W/mK2 from 4×10-5 W/mK2 after post treatment of the as-deposited film.

Info:

Periodical:

Advanced Materials Research (Volumes 194-196)

Edited by:

Jianmin Zeng, Taosen Li, Shaojian Ma, Zhengyi Jiang and Daoguo Yang

Pages:

2400-2403

DOI:

10.4028/www.scientific.net/AMR.194-196.2400

Citation:

T. B. Chen et al., "Influence of Sputtering Power of Te and Annealing on Sb-Te Thin Films Fabricated by RF and DC Co-Sputtering", Advanced Materials Research, Vols. 194-196, pp. 2400-2403, 2011

Online since:

February 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.