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Influence of Sputtering Power of Te and Annealing on Sb-Te Thin Films Fabricated by RF and DC Co-Sputtering

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Abstract:

Antimony and tellurium were deposited on K9 glass via direct current and radio frequency magnetron co-sputtering. Antimony telluride thermoelectric thin films were simultaneously synthesized without post treatment. The influence of the sputtering power of Te and annealing of Sb-Te fabricated by magnetron sputtering were investigated. The maximum Seebeck coefficient of Sb-Te film was 212 μV/K which was obtained at the sputtering power of Sb 4W and Te 60W separately. When annealed at 300 °C, the electrical resistivity and Seebeck coefficient of the film are 6.67x104 S/m and 119 μV/K. The power factor increased to the highest value of 9.4×10-4 W/mK2 from 4×10-5 W/mK2 after post treatment of the as-deposited film.

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Periodical:

Advanced Materials Research (Volumes 194-196)

Pages:

2400-2403

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.194-196.2400

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Online since:

February 2011

Authors:

Tian Bao Chen, Ping Fan, Zhuang Hao Zheng, Dong Ping Zhang, Xing Min Cai, Guang Xing Liang, Jing Rong Chi

Keywords:

Antimony Telluride, Co-Sputtering, Magnetron Sputtering, Thermoelectric Thin Film

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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