Fabrication and Performance of Photocatalytic GaN Powders

Takayuki Nakano; Masateru Hamada; Shunro Fuke

doi:10.4028/www.scientific.net/AMR.222.142

Paper Titles

Nanostructural Control of Pt Layer on Counter Electrode for Application to Dye-Sensitized Solar Cells
p.126

Influence of Laser Radiation on Optical Properties and Surface Structure of CdZnTe Crystal
p.130

Surface Functionalization of Graphene Layer-Encapsulated Magnetic Nanoparticles by Inductively Coupled Plasma
p.134

Stable Emission Characteristics of Low Work Function Amorphous Carbon Coated Transfer Mold Nickel Field Emitter Arrays in Harsh Environment
p.138

Fabrication and Performance of Photocatalytic GaN Powders
p.142

Thermal Neutron Detection by CdTe Detector
p.146

Process Analysis of Laser Welding Method with Polybutyleneterephthalate (PBT)
p.150

High-Efficiency SOI Photodetector Utilizing Surface Plasmon Resonance in Gold Corrugated Structure
p.154

Decrease of Point Defect Concentration at a Surface of ZnO/Si Heterostructure by Powerful Laser Radiation
p.158

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 222Fabrication and Performance of Photocatalytic GaN...

Fabrication and Performance of Photocatalytic GaN Powders

Abstract:

Group-III nitrides are expected to be used in future photocatalytic materials. InGaN is expected to be used for photocatalytic applications in the visible light region. Photocatalytic materials are used primarily in coatings and powders, and powdered photocatalysts are expected to be formed from group-III nitride powders. In this study, we produced GaN powders by nitriding Ga precursors at high temperatures under an atmosphere of NH3. The photocatalytic characteristics of the GaN powder were dependent on nitrization temperature. In addition, the crystallinity of the GaN powders and the photocatalysis were rapidly improved at nitrization temperatures over 1000°C.