Magnetization Peculiarities of Defects in Silicon Produced by Ni+, Co+, Fe+ Ion Implantation

Aliaksandra Karabko; Anatoly Dostanko; Natalia Lapchuk; Pavels Onufrijevs

doi:10.4028/www.scientific.net/AMR.222.82

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 222Magnetization Peculiarities of Defects in Silicon...

Magnetization Peculiarities of Defects in Silicon Produced by Ni⁺, Co⁺, Fe⁺ Ion Implantation

Abstract:

Silicon p-type (100) wafers implanted with Ni, Co, Fe ions to a dose range of 3∙1013–3∙1016 cm-2 have been investigated by means of EPR. The g-factor from dangling bonds of silicon modified by Ni, Co, Fe ion implantation is found to be different from the g-factor of amorphous silicon explained by the change of the local magnetic permeability r. Extreme character of the spin concentration on dose dependence is found, being not typical for silicon.

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Periodical:

Advanced Materials Research (Volume 222)

Pages:

82-85

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.222.82

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Online since:

April 2011

Authors:

Aliaksandra Karabko, Anatoly Dostanko, Natalia Lapchuk, Pavels Onufrijevs

Keywords:

Co, EPR, Fe Ions, Ion Implantation, Magnetisation, Ni, Silicon

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