Magnetization Peculiarities of Defects in Silicon Produced by Ni+, Co+, Fe+ Ion Implantation

Abstract:

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Silicon p-type (100) wafers implanted with Ni, Co, Fe ions to a dose range of 3∙1013–3∙1016 cm-2 have been investigated by means of EPR. The g-factor from dangling bonds of silicon modified by Ni, Co, Fe ion implantation is found to be different from the g-factor of amorphous silicon explained by the change of the local magnetic permeability r. Extreme character of the spin concentration on dose dependence is found, being not typical for silicon.

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Periodical:

Edited by:

Arturs Medvids

Pages:

82-85

DOI:

10.4028/www.scientific.net/AMR.222.82

Citation:

A. Karabko et al., "Magnetization Peculiarities of Defects in Silicon Produced by Ni+, Co+, Fe+ Ion Implantation", Advanced Materials Research, Vol. 222, pp. 82-85, 2011

Online since:

April 2011

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$35.00

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