Prepared and Surface Analyzed of Nano-Silicon Nitride Thin Films

Gui Wen Yu; Jing Dong; Ye Tian; Wen Xin Li; Xue Gong

doi:10.4028/www.scientific.net/AMR.233-235.2015

Paper Titles

Investigation on the Rheological Behavior of Polyamide6/Montmorillonite Nanocomposites by Reactive Extrusion
p.1998

Surface Modification of Carbon Fiber by Polymer Emulsions and Mechanical Property of Modified Carbon Reinforced Concrete
p.2002

The Influence of pH Value and SO₄^2- Concentration on Strength of Cemented Soil
p.2006

Synthesis, Characterization and Catalytic Efficiency of Ti-SBA-15 Mesoporous Materials
p.2011

Prepared and Surface Analyzed of Nano-Silicon Nitride Thin Films
p.2015

Reuse of Spent Natural Zeolite for Methylene Blue Adsorption by Microwave Irradiation
p.2019

Controllable Extinction Property of Au/SiO₂ Nanocomposite Induced by Neutralization Reaction Time
p.2023

Crossover of the Curing Mechanisms and Double Glass Transition Temperatures of Tetrabromo-Bisphenol-a Epoxy Resin with 4,4-Diaminodiphenylsulfone
p.2029

Synthesis and Characterizations of MCM-41 Silica with Thick Pore Wall
p.2034

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 233-235Prepared and Surface Analyzed of Nano-Silicon...

Prepared and Surface Analyzed of Nano-Silicon Nitride Thin Films

Abstract:

Thin silicon nitride films were prepared on PET by r.f. reactive sputtering. Deposition Rate, reactive mechanisms, the thickness attribution, chemical stoichiometry and impurity were studied by means of RBS, XPS, and ellipsometer. Results show that chemical stoichiometric films with N-to-Si atomic ratio of 4:3 were achieved even at room temperature. Depth profiles of XPS and SIMS reveal that oxide exists only at the interface between nitride and substrate and Ar atoms are buried in the films.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 233-235)

Pages:

2015-2018

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.233-235.2015

Citation:

Cite this paper

Online since:

May 2011

Authors:

Gui Wen Yu, Jing Dong, Ye Tian, Wen Xin Li, Xue Gong

Keywords:

Chemical Stoichiometric, Reactive Sputtering, Silicon Nitride

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Y. Hirohata, N. Shimamoto, T. Yamashima, K. Yabe, Thin Solid Films, 253(1994) 425-429.

DOI: 10.1016/0040-6090(94)90360-3

Google Scholar

[2] Effiong Ibok, Miguel Santana and Shyam Garg, in Silicon Nitride and Silicon Dioxide Thin Insulating Films, Vik J. Kapoor and William D. Brown, Editors, PV 94-16, p.385, The Electrochemical Society Proceedings Series, Pennington, NJ(1994).

Google Scholar

[3] Junting Luo. Journal of Wuhan University of Technology (Materials Science Edition). 2006. (03)97-99

Google Scholar

[4] Vargheese, K, D, R,ao, G, M. J V ac SciTechnol.2001, 19(4):1336-1340.

Google Scholar

[5] F. Martinet, G. Guegan. J. C. Jesionka, in Silicon Nitride Thin Insulating Films, Vik J. Kapoor and William D. Brown, Editors, PV 83-8, p.190, The Electrochemical Society Proceedings Series, Pennington, NJ(1983).

Google Scholar

[6] W. H. Ritchie, and W. Metz, in Silicon Nitride Thin Insulating Films, Vik J. Kapoor and William D. Brown, Editors, PV 83-8, p.161, The Electrochemical Society Proceedings Series, Pennington, NJ(1983).

Google Scholar

[7] S., Osono, Y., Uchiyama, M., Kitazoe, K.,et,al..Thinsolid films,2003,430(1-2):165-169.

Google Scholar

[8] VERLAAN,V; VERKERK, A, D; ARNOLDBIK, W, M, et, al. SolidFilms, 2009, 517(12): 3499-3502.

Google Scholar

[9] Zhang,H,uafu,; Q,i,Kangcheng; W,u, Jian. Materials Review,2004(18):298-300.

Google Scholar