Effects of Oxygen-Deficient Ambience Annealing on Polycrystalline Y2O3 Film

Abstract:

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Polycrystalline Y2O3 thin films have been prepared by radio frequency (RF) reactive sputtering. The topographies of Y2O3 films were shown by AFM. The XPS measurement has found the interfacial silicates and the amorphous silicon sub-oxide (SiOx) interfacial layer which is also indicated by the FTIR investigation. The interfacial reactions have been induced by an oxygen-deficient or oxygen-sufficient reaction environment at Y2O3/Si interface.

Info:

Periodical:

Advanced Materials Research (Volumes 233-235)

Edited by:

Zhong Cao, Lixian Sun, Xueqiang Cao, Yinghe He

Pages:

2367-2370

DOI:

10.4028/www.scientific.net/AMR.233-235.2367

Citation:

J. P. Zhang et al., "Effects of Oxygen-Deficient Ambience Annealing on Polycrystalline Y2O3 Film", Advanced Materials Research, Vols. 233-235, pp. 2367-2370, 2011

Online since:

May 2011

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$35.00

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