Effects of Oxygen-Deficient Ambience Annealing on Polycrystalline Y2O3 Film

Jin Ping Zhang; Yuan Dao Chen; Gu Zhen Zhou; Ji Lin Lu

doi:10.4028/www.scientific.net/AMR.233-235.2367

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 233-235Effects of Oxygen-Deficient Ambience Annealing on...

Effects of Oxygen-Deficient Ambience Annealing on Polycrystalline Y₂O₃ Film

Abstract:

Polycrystalline Y₂O₃ thin films have been prepared by radio frequency (RF) reactive sputtering. The topographies of Y₂O₃films were shown by AFM. The XPS measurement has found the interfacial silicates and the amorphous silicon sub-oxide (SiO_x) interfacial layer which is also indicated by the FTIR investigation. The interfacial reactions have been induced by an oxygen-deficient or oxygen-sufficient reaction environment at Y₂O₃/Si interface.

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Periodical:

Advanced Materials Research (Volumes 233-235)

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2367-2370

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https://doi.org/10.4028/www.scientific.net/AMR.233-235.2367

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Online since:

May 2011

Authors:

Jin Ping Zhang, Yuan Dao Chen, Gu Zhen Zhou, Ji Lin Lu

Keywords:

Annealing, FT-IR, XPS, Y₂O₃

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