The Co-Doping Effect of Si and Mn on the Dilute Ferromagnetic Semiconductor Thin Films

Gang Xiang; Xi Zhang

doi:10.4028/www.scientific.net/AMR.233-235.2624

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 233-235The Co-Doping Effect of Si and Mn on the Dilute...

The Co-Doping Effect of Si and Mn on the Dilute Ferromagnetic Semiconductor Thin Films

Abstract:

The co-doping effect of Si and Mn have been studied in the low temperature grown ferromagnetic semiconductor (Ga,Mn)As thin films. It is found that Si doping decreases the Curie temperatures of the ferromagnetic sample due to carrier compensation and defects formation. The transport studies show that the Si incorporation increases the resistivity of the (Ga,Mn)As thin films, and increase the planar Hall resistance while increases the resistance transitions in the magnetic samples.

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Advanced Materials Research (Volumes 233-235)

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2624-2628

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.233-235.2624

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Online since:

May 2011

Authors:

Gang Xiang, Xi Zhang

Keywords:

Co-Doping, Dilute Ferromagnetic Semiconductor, GaMnAs, Planar Hall Effect

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