The Co-Doping Effect of Si and Mn on the Dilute Ferromagnetic Semiconductor Thin Films

Abstract:

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The co-doping effect of Si and Mn have been studied in the low temperature grown ferromagnetic semiconductor (Ga,Mn)As thin films. It is found that Si doping decreases the Curie temperatures of the ferromagnetic sample due to carrier compensation and defects formation. The transport studies show that the Si incorporation increases the resistivity of the (Ga,Mn)As thin films, and increase the planar Hall resistance while increases the resistance transitions in the magnetic samples.

Info:

Periodical:

Advanced Materials Research (Volumes 233-235)

Edited by:

Zhong Cao, Lixian Sun, Xueqiang Cao, Yinghe He

Pages:

2624-2628

DOI:

10.4028/www.scientific.net/AMR.233-235.2624

Citation:

G. Xiang and X. Zhang, "The Co-Doping Effect of Si and Mn on the Dilute Ferromagnetic Semiconductor Thin Films", Advanced Materials Research, Vols. 233-235, pp. 2624-2628, 2011

Online since:

May 2011

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$35.00

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