Study on Poly-Si Thin Films by Vacuum Evaporation
The process of Vacuum Evaporation and characteristic of poly-Si thin film on different kinds of substrates (copper and glass) are studied in this thesis. The samples were characterized by TEM, AFM and metallographic microscope. The result indicates that the samples after annealing treatment are polycrystalline. Thin film on copper substrate shows better properties in degree of crystallization, grain smoothness, compact density and uniformity. The thickness of thin films on both copper and glass substrates is 1.2µm.The grain size ranges from 0.1~0.15µm.And the pressure-resisting value of the poly-Si thin film is 384.2V.
Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He
Z. Wang et al., "Study on Poly-Si Thin Films by Vacuum Evaporation", Advanced Materials Research, Vols. 239-242, pp. 360-363, 2011