Study on Poly-Si Thin Films by Vacuum Evaporation

Zhou Wang; Bin Li; Chuan Qi Fu; Takayuki Murotani

doi:10.4028/www.scientific.net/AMR.239-242.360

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Microstructure and Mechanical Properties of Mg-Y Alloys
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Synthesis of YVO₄ Nanoparticles with Controllable Morphologies by Solvothermal Method
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Study on Poly-Si Thin Films by Vacuum Evaporation
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Determination of Two Organophosphorus Pesticides Using Electrochemical Sensor in Water Samples
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Preparation and Characterization of Nanocrystalline Ce-Containing Layered Double Hydroxides
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A Method about the Worn Materials Applied to the Marine Mechanical and Electronic Equipments in Condition Monitoring
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 239-242Study on Poly-Si Thin Films by Vacuum Evaporation

Study on Poly-Si Thin Films by Vacuum Evaporation

Abstract:

The process of Vacuum Evaporation and characteristic of poly-Si thin film on different kinds of substrates (copper and glass) are studied in this thesis. The samples were characterized by TEM, AFM and metallographic microscope. The result indicates that the samples after annealing treatment are polycrystalline. Thin film on copper substrate shows better properties in degree of crystallization, grain smoothness, compact density and uniformity. The thickness of thin films on both copper and glass substrates is 1.2µm.The grain size ranges from 0.1~0.15µm.And the pressure-resisting value of the poly-Si thin film is 384.2V.