Dislocation Mechanisms during High Temperature Creep Experiments on MC2 Alloy

Abstract:

The creep behaviour of MC2 single crystal superalloy has been studied at 1150°C/80 MPa, with an applied load along [001] axis. The resulting dislocation microstructures were examined by transmission electron microscopy. The occurrence of a[010] type dislocations (with a zero Schmid factor) within the ordered γ' precipitates is often observed. It is shown that those dislocations moved by a climb process, based on a mechanism involving two dislocation systems and vacancy exchanges, as proposed in the literature. We calculate the vacancy fluxes associated with such a mechanism and show that the vacancy transportation can be easily insured by a simple diffusion process. This calculation shows that the diffusion and climbing steps do not seem to be the creep rate controlling mechanisms for those situations in MC2 alloy.

• Periodical: Advanced Materials Research (Volume 278)
• Pages: 7-12
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.278.7
• Online since: July 2011
• Authors: Fabienne Touratier, Bernard Viguier, Christophe Siret, Sandrine Lesterlin, Eric Andrieu
• Keywords: Climb, Creep, Diffusion, Dislocation, Single Crystal Superalloy

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