Preparation of Ta-Ti Co-Doped VO2 Polycrystal Thin Film with High Resistance Temperature Coefficient and without Hysteresis

Mei Ping Jiang; Meng Zhao; Jin Hua Li

doi:10.4028/www.scientific.net/AMR.284-286.2177

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 284-286Preparation of Ta-Ti Co-Doped VO2 Polycrystal Thin...

Preparation of Ta-Ti Co-Doped VO₂ Polycrystal Thin Film with High Resistance Temperature Coefficient and without Hysteresis

Abstract:

Using vanadyl acetylacetonate (C₁₀H₁₄O₅V) as precursor, use Tantalum Ethoxide (Ta(OC₂H₅)₅) and Tetrabutyl titanate （C₁₆H₃₆O₄Ti）as doper, by sol-gel method fabricate Ta, Ti mono doping and Ta-Ti co-doped V_1-x-yTa_xTi_yO2 thin film. XRD spectrum indicated that the film was oriented in (011) direction. XPS results indicated the valence state of V, Ta, Ti in the film is +4, at all. While Ta mono doping, single 1at.%Ta can deduce the phase transiton temperature (T_t) by 7.8°C, phase transition hysteresis (ΔT) by 1°C. When the doping rate is 6at.%, T_t=22°C, ΔT=1°C. Ti dopings has little affection to T_t but deduce ΔT obviously. Ta-Ti co-doped V_0.93Ta_0.06Ti_0.01O₂ film thin films without phase transition hysteresis were also fabricated, and its TCR is as high as -7.58%/K at 25°C.

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Periodical:

Advanced Materials Research (Volumes 284-286)

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2177-2181

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.284-286.2177

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July 2011

Authors:

Mei Ping Jiang, Meng Zhao, Jin Hua Li

Keywords:

Doped Vanadium Oxide, Hysteresis, Phase Transition, Temperature Coefficient of Resistance

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