Effect of Oxide Buffer Layers on the Optical and Electrical Properties of Ga-Doped Zinc Oxide Thin Film

Byung Woo Gil; Sung Eui Lee; Hee Chul Lee

doi:10.4028/www.scientific.net/AMR.287-290.1837

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 287-290Effect of Oxide Buffer Layers on the Optical and...

Effect of Oxide Buffer Layers on the Optical and Electrical Properties of Ga-Doped Zinc Oxide Thin Film

Abstract:

The effects of oxide buffer layers on the optical and electrical properties of sputtered Gallium-doped zinc oxide (GZO) films were intensively investigated for developing the electrodes of photonic devices, which demand high optical transmittance and low resistivity. The use of Al₂O₃ and SiO₂ buffer layers could increase transmittance of GZO films to 90.69% around the wavelength of 550 nm by controlling the optical spectrum. The resistivity of the deposited GZO films was much dependent on the deposition condition of O₂ ratio during buffer layer deposition. It is considered that the carrier mobility of GZO films on SiO₂ buffer is highly related to the lattice crystallinity of SiO₂ and GZO films. In contrast, on the Al₂O₃ buffer layer, rough surface morphology could increase the resistivity of GZO films due to the doping effect of diffused Al atoms.

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Periodical:

Advanced Materials Research (Volumes 287-290)

Pages:

1837-1840

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.287-290.1837

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Online since:

July 2011

Authors:

Byung Woo Gil, Sung Eui Lee, Hee Chul Lee

Keywords:

Buffer Layer, Ga-Doped Zinc Oxide, RF Magnetron Sputtering, Transparent Conductors

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