Paper Titles

Effect of Target Power and Bias on Adhesive Force of BCN Films
p.2148

Fundamental Research on the Mechanism of High-Speed Welding Undercut
p.2152

Study on Ultrafiltration Membrane Technology for Water Purification in Zhengzhou
p.2156

Influence of Anisotropy Behavior in UOE Process for X80 Micro Alloy Steel
p.2161

Spectroscopic Ellipsometry Study on HfO₂ Thin Films Deposited at Different RF Powers
p.2165

Study on Crystallization Characteristic of 3PE Anti-Corrosion Coating for Steel Pipeline
p.2169

The Research on YAG Laser Welding Porosity of Al-Li Alloy
p.2175

Fatigue Properties of AF1410 Steel Welded Joint by Electron Beam Welding
p.2181

Identification of Dynamical Contact Parameters for Spindle-Tool Holder Interface Based on the Receptance Coupling Substructure Approach
p.2185

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 287-290Spectroscopic Ellipsometry Study on HfO2 Thin...

Spectroscopic Ellipsometry Study on HfO₂ Thin Films Deposited at Different RF Powers

Article Preview

Abstract:

HfO₂ thin films were prepared by radio frequency (RF) magnetron sputtering at different RF powers. The influence of RF power on optical properties of HfO₂ thin films were investigated by spectroscopic ellipsometry (SE) toghther with high-resolution transmission electron microscopy (HR-TEM) and Fourier transform infrared spectroscopy (FTIR). The results show that there is a SiO₂ interface layer between HfO₂ thin film and Si substrate. A four layer structured model consisting of SiO₂ interfacial layer was used to fit the SE data. With the increasing RF power, the refractive index of the HfO₂ thin films increases firstly and then decreases and, the extinction coefficient of the HfO₂ thin films increases little.

You might also be interested in these eBooks

Applications of Engineering Materials

Info:

Periodical:

Advanced Materials Research (Volumes 287-290)

Pages:

2165-2168

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.287-290.2165

Citation:

Cite this paper

Online since:

July 2011

Authors:

Wen Ting Liu, Zheng Tang Liu

Keywords:

Extinction Coefficient, HFO₂ Thin Film, Refractive Index, RF Power

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2011 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] H. Kim, P. C. Mclntyre, K. C. Saraswat: App. Phys. Lett. Vol. 82 (2003), p.106

[2] G. D. Wilk, R. M. Wallace, J. M. Anthony: J. Appl. Phys. Vol. 89 (2001), p.5243

[3] G. He, L. Q. Zhu, M. Liu, Q. Fang, L. D. Zhang: App. Surf. Sci. Vol. 253 (2007), p.3413.

[4] L. Pereira, P. Barquinha, E. Fortunato, R. Martins: Mater. Sci. Semicond. Process. Vol. 9 (2006), p.1125

[5] J. Aarik，H. Mändar, M. Kirm, L. Pung: Thin Solid Films. Vol. 466 (2004), p.41

DOI: 10.1016/j.tsf.2004.01.110

[6] M. F. Al-Kuhaili: Optical Material. Vol. 27 (2004), p.383

[7] R. Chow, S. Falabella, G. E. Loomis, F. Rainer, C. J. Stolz, M. R. Kozlowski: Appl. Opt. Vol. 32 (1993), p.5567

DOI: 10.1364/ao.32.005567

[8] T. Nishide, S. Honda, M. Matsuura, M. Ide: Thin Solid Films. Vol. 371 (2000), p.61

[9] L. Pereira, P. Barquinha, E. Fortunato, R. Martins: Mater. Sci. Eng. B. Vol. 118 (2005), p.210

[10] N. Primeau, C. Vautey, M. Langlet: Thin Solid Films. Vol. 310 (1997), p.47

[11] M. Toledano-Luque, E. San Andrés, J. Oliea, A. del Prado, I. Mártil, W. Bohne, J. Röhrich, E. Strub: Mater. Sci. Semicond. Process. Vol. 9 (2006), p.1020

DOI: 10.1016/j.vacuum.2008.03.083

[12] W. T. Liu, Z. T. Liu, T. T.Tan, F. Yan: Chin. Phys. Lett. Vol. 27 (2010), p.027703

[13] U. Brossmann, R. Würschum, U. Söderval, H. Schaefer: J. Appl. Phys. Vol. 85 (1999), p.7646

[14] Y. J. Cho, N. V. Nguyen, C. A. Richter, J. R. Ehrstein: App. Phys. Lett. Vol. 80 (2002), p.1249

[15] J. M. Khoshman, M. E. Kordesch: Surf. Coat. Technol. Vol. 201 (2006), p.3530

[16] Y. Wang, Z. Lin, X. Cheng, H. Xiao, F. Zhang, S. Zou: Appl. Surf. Sci. Vol. 228 (2004), p.93