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Conspicuous Presence of Higher Order Transitions in the Photoluminescence of InxGa1-xN/GaN Quantum Wells

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Abstract:

For successive annealing stages the photoluminescence (PL) peaks of InXGa1-XN/GaN quantum wells (QWs) shift initially towards red which is followed by a blue. This phenomenon contradicts the usual monotonic blueshift. We have found that the phenomena can be explained properly only if we consider recombinations from the higher sub-bands to be present in the PL of the InXGa1-XN/GaN QWs, which is not usual. When a strong piezoelectric field exists across a QW, as encountered in InXGa1-XN/GaN QWs, the probability of optical transitions from higher sub-bands of the QW become more probable. In this paper this theory has been established from experimental results.

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Periodical:

Advanced Materials Research (Volume 31)

Pages:

62-64

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.62

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Cite this paper

Online since:

November 2007

Authors:

Dipankar Biswas, Tapas Das, Sanjib Kabi, Subindu Kumar

Keywords:

Annealing, Photoluminescence (PL), Quantum Well

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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