Conspicuous Presence of Higher Order Transitions in the Photoluminescence of InxGa1-xN/GaN Quantum Wells

Abstract:

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For successive annealing stages the photoluminescence (PL) peaks of InXGa1-XN/GaN quantum wells (QWs) shift initially towards red which is followed by a blue. This phenomenon contradicts the usual monotonic blueshift. We have found that the phenomena can be explained properly only if we consider recombinations from the higher sub-bands to be present in the PL of the InXGa1-XN/GaN QWs, which is not usual. When a strong piezoelectric field exists across a QW, as encountered in InXGa1-XN/GaN QWs, the probability of optical transitions from higher sub-bands of the QW become more probable. In this paper this theory has been established from experimental results.

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Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

62-64

DOI:

10.4028/www.scientific.net/AMR.31.62

Citation:

D. Biswas et al., "Conspicuous Presence of Higher Order Transitions in the Photoluminescence of InxGa1-xN/GaN Quantum Wells", Advanced Materials Research, Vol. 31, pp. 62-64, 2008

Online since:

November 2007

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$35.00

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