Conspicuous Presence of Higher Order Transitions in the Photoluminescence of InxGa1-xN/GaN Quantum Wells

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For successive annealing stages the photoluminescence (PL) peaks of InXGa1-XN/GaN quantum wells (QWs) shift initially towards red which is followed by a blue. This phenomenon contradicts the usual monotonic blueshift. We have found that the phenomena can be explained properly only if we consider recombinations from the higher sub-bands to be present in the PL of the InXGa1-XN/GaN QWs, which is not usual. When a strong piezoelectric field exists across a QW, as encountered in InXGa1-XN/GaN QWs, the probability of optical transitions from higher sub-bands of the QW become more probable. In this paper this theory has been established from experimental results.

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Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

62-64

Citation:

D. Biswas et al., "Conspicuous Presence of Higher Order Transitions in the Photoluminescence of InxGa1-xN/GaN Quantum Wells", Advanced Materials Research, Vol. 31, pp. 62-64, 2008

Online since:

November 2007

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[1] Yi-Yin Chung et al: J. Appl. Phys. Vol. 93 (2003), p.9693.

[2] Sang-Wan Ryu et al: Appl. Phys. Lett. Vol. 67 (1995), p.1417.

[3] K. B. Nam et al: Appl. Phys. Lett. Vol. 81 (2002), p.1809.

[4] D. Biswas, S. Kumar and T. Das: accepted for publication in Materials Letters (2007).

[5] Peter Y. Yu and Manuel Cardona: Fundamentals of Semiconductors (Springer-Verlag Berlin Heidelberg, 1996).

[6] A. Hangleiter et al : Phys. Stat. Sol. (b) Vol. 216 (1999), p.427.

[7] Jeng-Hung Chen et al: Thin Solid Films Vol. 498 (2006), p.123.

[8] Takashi Matsuoka et al: Appl. Phys. Lett. Vol. 81(7) (2002), p.1246.

[9] T. V. Shubina et al: Phy. Rev. Lett. Vol. 92(11) (2004), p.117407(4).

[10] Q. X. Guo et al: Appl. Phys. Lett. Vol. 86(23) (2005), p.231913.

[11] J. Wu et al: Appl. Phys. Lett. Vol. 80 (2002), p.3967.

[12] J. Wu et al: Appl. Phys. Lett. Vol. 84 (2004), p.2805.

[13] Tokuo Yodo, Hiroaki Yona, Hironori Ando, Daiki Nosei and Yoshiyuki Harada: Appl. Phys. Lett. Vol. 80 (2002), p.968.

DOI: https://doi.org/10.1063/1.1450255