Growth, Surface Morphology and Optical Properties of Gallium Nitride Nanowires

V. Suresh Kumar; J. Kumar

doi:10.4028/www.scientific.net/AMR.31.42

Paper Titles

Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers
p.30

Sputtered SiO₂ Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures
p.33

DFB Lasers with Tilted Waveguide for Multi-Wavelength Generation
p.36

Enhanced UV Photodetector Responsivity in Porous GaN/Si(111) by Metal-Assisted Electroless Etching
p.39

Growth, Surface Morphology and Optical Properties of Gallium Nitride Nanowires
p.42

Optical Reﬂection from a Monolayer of Embedded Nano-Objects Covered by a Thick Capping Layer
p.52

Visible Light Emission from Ordered Nanopatterned InP Surface
p.56

Dependence of the Absorption Spectra of III-V Semiconductor Quantum Dots on the Size Distribution
p.59

Conspicuous Presence of Higher Order Transitions in the Photoluminescence of In_xGa_1-xN/GaN Quantum Wells
p.62

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Growth, Surface Morphology and Optical Properties...

Growth, Surface Morphology and Optical Properties of Gallium Nitride Nanowires

Abstract:

We report on the growth mechanism, structural and optical characterstics of Gallium nitride nanowires prepared on sapphire substrates (0001) by reacting metal gallium with Gallium nitride powder and ammonia in the temperature range of 800 to 1050°C. GaN nanowires samples were characterized by using X-ray diffraction technique which shows wurtzite structure of GaN nanowires and the lattice parameters are calculated. Scanning electron microscopy images reveals that the dimension of the nanowires are around 60 – 80 nm and the length of 1 - 2 millimeters. Three Raman modes of GaN have been observed at frequencies 530, 554 and 564 cm-1. Photoluminescence spectrum reveals the band edge at 3.4 eV and gives yellow luminescence.