Sputtered SiO2 Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures

V. Hongpinyo; Y.H. Ding; J. Anderson; Hery S. Djie; Boon S. Ooi; R.R. Du; A. Ganjoo; H. Jain

doi:10.4028/www.scientific.net/AMR.31.33

Paper Titles

Modulation of Three Dimensional Photonic Band Gap in Visible Region
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Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy
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Design and Analysis of 2D Photonic Crystal Waveguides for High Coupling Efficiency
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Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers
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Sputtered SiO₂ Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures
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DFB Lasers with Tilted Waveguide for Multi-Wavelength Generation
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Enhanced UV Photodetector Responsivity in Porous GaN/Si(111) by Metal-Assisted Electroless Etching
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Growth, Surface Morphology and Optical Properties of Gallium Nitride Nanowires
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Optical Reﬂection from a Monolayer of Embedded Nano-Objects Covered by a Thick Capping Layer
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Sputtered SiO2 Induced Atomic Interdiffusion in...

Sputtered SiO₂ Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures

Abstract:

We investigate the influence of sputtered silica as annealing cap on the enhancement of intermixing rate of semiconductor quantum nanostructures. After sputtered silica application and subsequent rapid thermal annealing, we observed bandgap shift of over 200 meV with respect to the bandgap of as-grown material from various GaAs-based quantum well (QW) heterostructures such as GaAs/AlGaAs, InAlGaP/GaAs, and GaAs/AlGaAs systems at significantly lower temperature than the conventional dielectric cap process with plasma enhanced chemical vapor deposition (PECVD). The results suggest that the sputtered silica process is a promising intermixing technique for the monolithic integration of multiple active/passive photonic components on GaAs-based material systems.

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Periodical:

Advanced Materials Research (Volume 31)

Pages:

33-35

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.33

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Online since:

November 2007

Authors:

V. Hongpinyo, Y.H. Ding, J. Anderson, Hery S. Djie, Boon S. Ooi, R.R. Du, A. Ganjoo, H. Jain

Keywords:

Impurity Diffusion, Impurity Free Vacancy Induced Disordering, Photonic Integrated Circuits, Quantum Well, Quantum Well Intermixing

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References

[1] O. P. Kowalski, C. J. Hamilton, S. D. McDougall, J. H. Marsh, A. C. Bryce, R. M. De La Rue, B. Vögele, C. R. Stanley, C. C. Button and J. S. Roberts, Universal damage induced technique for quantum well intermixing, Appl. Phys. Lett., 72, pp.581-583 (1998).

DOI: 10.1063/1.120765

Google Scholar

[2] A. C. Bryce, J. H. Marsh, D. A. Yanson, O. P. Kowalski and S. S. Kim, Selective quantum dot intermixing for photonic devices, 5th IEEE Conference on Nanotechnology, 1, pp.386-389 (2005).

DOI: 10.1109/nano.2005.1500777

Google Scholar

[3] B. S. Ooi, K. McIlvaney, M. W. Street, A. S. Helmy, S. G. Ayling, A. C. Bryce, J. H. Marsh and J. S. Roberts, Selective quantum-well intermixing in GaAs-AlGaAs structures using impurityfree vacancy diffusion, IEEE J. Quantum Electronics, 33, pp.1784-1793 (1997).

DOI: 10.1109/3.631284

Google Scholar

[4] B. S. Ooi, A. C. Bryce, J. H. Marsh, and J. S. Roberts, Effect of p and n doping on neutral impurity and SiO2 dielectric cap induced quantum well intermixing in GaAs/AlGaAs structures, Semicond. Sci. Technol., 12, pp.121-127 (1997).

DOI: 10.1088/0268-1242/12/1/020

Google Scholar