Sputtered SiO2 Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures

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We investigate the influence of sputtered silica as annealing cap on the enhancement of intermixing rate of semiconductor quantum nanostructures. After sputtered silica application and subsequent rapid thermal annealing, we observed bandgap shift of over 200 meV with respect to the bandgap of as-grown material from various GaAs-based quantum well (QW) heterostructures such as GaAs/AlGaAs, InAlGaP/GaAs, and GaAs/AlGaAs systems at significantly lower temperature than the conventional dielectric cap process with plasma enhanced chemical vapor deposition (PECVD). The results suggest that the sputtered silica process is a promising intermixing technique for the monolithic integration of multiple active/passive photonic components on GaAs-based material systems.

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Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

33-35

Citation:

V. Hongpinyo et al., "Sputtered SiO2 Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures", Advanced Materials Research, Vol. 31, pp. 33-35, 2008

Online since:

November 2007

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$38.00

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