Enhanced UV Photodetector Responsivity in Porous GaN/Si(111) by Metal-Assisted Electroless Etching
This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as grown GaN. The samples were investigated by scanning electron microscopy (SEM), high resolution x-ray diffraction (HRXRD), and photoluminescence (PL). The porous area is very uniform, with pore diameter in the range of 80-110 nm. XRD measurements showed that the (0002) diffraction plane peak width of porous samples was slightly broader than the as-grown sample. PL measurements revealed that the near band edge peak of the porous samples were redshifted. Metal-semiconductor-metal (MSM) photodiode was fabricated on the samples. For as grown GaN sample, this detector shows a sharp cut-off wavelength at 362 nm. A maximum responsivity of 0.258 A/W was achieved at 360 nm. For the porous GaN sample, this detector shows a sharp cut-off wavelength at 364 nm. A maximum responsivity of 0.771 A/W was achieved at 363 nm.
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
L. S. Chuah et al., "Enhanced UV Photodetector Responsivity in Porous GaN/Si(111) by Metal-Assisted Electroless Etching", Advanced Materials Research, Vol. 31, pp. 39-41, 2008