Enhanced UV Photodetector Responsivity in Porous GaN/Si(111) by Metal-Assisted Electroless Etching

Lee Siang Chuah; Hassan Zainuriah; Abu Hassan Haslan

doi:10.4028/www.scientific.net/AMR.31.39

Paper Titles

Design and Analysis of 2D Photonic Crystal Waveguides for High Coupling Efficiency
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Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers
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Sputtered SiO₂ Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures
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DFB Lasers with Tilted Waveguide for Multi-Wavelength Generation
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Enhanced UV Photodetector Responsivity in Porous GaN/Si(111) by Metal-Assisted Electroless Etching
p.39

Growth, Surface Morphology and Optical Properties of Gallium Nitride Nanowires
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Optical Reﬂection from a Monolayer of Embedded Nano-Objects Covered by a Thick Capping Layer
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Visible Light Emission from Ordered Nanopatterned InP Surface
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Dependence of the Absorption Spectra of III-V Semiconductor Quantum Dots on the Size Distribution
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Enhanced UV Photodetector Responsivity in Porous GaN/Si(111) by Metal-Assisted Electroless Etching

Abstract:

This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as grown GaN. The samples were investigated by scanning electron microscopy (SEM), high resolution x-ray diffraction (HRXRD), and photoluminescence (PL). The porous area is very uniform, with pore diameter in the range of 80-110 nm. XRD measurements showed that the (0002) diffraction plane peak width of porous samples was slightly broader than the as-grown sample. PL measurements revealed that the near band edge peak of the porous samples were redshifted. Metal-semiconductor-metal (MSM) photodiode was fabricated on the samples. For as grown GaN sample, this detector shows a sharp cut-off wavelength at 362 nm. A maximum responsivity of 0.258 A/W was achieved at 360 nm. For the porous GaN sample, this detector shows a sharp cut-off wavelength at 364 nm. A maximum responsivity of 0.771 A/W was achieved at 363 nm.