Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers

Abstract:

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One challenge for the realization of electrically drive nano-photonic devices is the formation of metal contacts and passivation. In this paper, we report a novel self-aligned method suitable for the formation of the metal contact and passivation for submicron photonic devices. Two different dielectric materials with high selectivity in wet chemical etching and a wet etching of semiconductor to create an undercut are involved. The whole process is completely compatible with existing compound semiconductor process. As a demonstration of this method, the fabrication and characterization of an InGaAsP/InP submicron-ridge waveguide lasers is presented. The method is extendable to high aspect ratio-submicron ridge waveguide and other device fabrication.

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Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

30-32

DOI:

10.4028/www.scientific.net/AMR.31.30

Citation:

E. L. Lim et al., "Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers", Advanced Materials Research, Vol. 31, pp. 30-32, 2008

Online since:

November 2007

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$35.00

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