Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers

Abstract:

One challenge for the realization of electrically drive nano-photonic devices is the formation of metal contacts and passivation. In this paper, we report a novel self-aligned method suitable for the formation of the metal contact and passivation for submicron photonic devices. Two different dielectric materials with high selectivity in wet chemical etching and a wet etching of semiconductor to create an undercut are involved. The whole process is completely compatible with existing compound semiconductor process. As a demonstration of this method, the fabrication and characterization of an InGaAsP/InP submicron-ridge waveguide lasers is presented. The method is extendable to high aspect ratio-submicron ridge waveguide and other device fabrication.

• Periodical: Advanced Materials Research (Volume 31)
• Pages: 30-32
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.31.30
• Online since: November 2007
• Authors: Ee Leong Lim, Jing Hua Teng, Soo Jin Chua, J.R. Dong, Norman Soo Seng Ang, Lip Fah Chong
• Keywords: Lift-Off, Metal Contact, Nanophotonics, Passivation, Ridge Waveguide, Semiconductor Lasers

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