Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers
One challenge for the realization of electrically drive nano-photonic devices is the formation of metal contacts and passivation. In this paper, we report a novel self-aligned method suitable for the formation of the metal contact and passivation for submicron photonic devices. Two different dielectric materials with high selectivity in wet chemical etching and a wet etching of semiconductor to create an undercut are involved. The whole process is completely compatible with existing compound semiconductor process. As a demonstration of this method, the fabrication and characterization of an InGaAsP/InP submicron-ridge waveguide lasers is presented. The method is extendable to high aspect ratio-submicron ridge waveguide and other device fabrication.
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
E. L. Lim et al., "Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers", Advanced Materials Research, Vol. 31, pp. 30-32, 2008