Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes

Zong You Yin; Xiao Hong Tang; Ji Xuan Zhang; Deny Sentosa; Jing Hua Teng; An Yan Du; Mee Koy Chin

doi:10.4028/www.scientific.net/AMR.31.17

Paper Titles

Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer
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Surface Optical Waves in Semi-Infinite One-Dimensional Photonic Crystals Containing Alternating Layers of Positive and Negative Media
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Titania/Ormosils Organic-Inorganic Hybrid Thin Films Doped with Azobenzene Small Molecules for Optical Switch Applications
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Sol-Gel Fabrication of Low Temperature Organic-Inorganic Hybrid Film Patterns for Photonic Applications
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Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes
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Modulation of Three Dimensional Photonic Band Gap in Visible Region
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Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy
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Design and Analysis of 2D Photonic Crystal Waveguides for High Coupling Efficiency
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Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Morphology and Crystal Quality of InAs QDs Grown...

Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes

Abstract:

Morphology and crystal-quality of InAs/In0.53Ga0.47As/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy (MOVPE) in N2 ambient using different growth modes have been studied. It is found that the morphology and crystal-quality of InAs QDs are dependant on the growth modes. After optimizing the dots’ growth modes, dots’ size dispersion and crystal-quality are both improved greatly, resulting in the enhancement factor of ∼ 2.9 in the photoluminescence (PL) peak-intensity from single QD. When the dots are buried, the dot size decrease compared with the free-standing dots due to the soon capping layer deposition during dots’ being buried. The thermal activation energy measured is comparable to the valence-band offset in the QD system calculated by 8 kp theory model. This indicates the PL quenching induced by the interface defects is suppressed due to the defect density lowering in the QDs grown by such optimized growth mode.