Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer

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Hall measurement is an effective means to measure carrier density and mobility in metals and semiconductors. This work examined the carrier mobility determined in the accumulation layer of organic field-effect transistors (OFETS) and proposed a method to explain data taken from rubrene single-crystal devices. The model was used to extract information on the trap states and the properties of the transport layer at different temperature.

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Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

4-6

DOI:

10.4028/www.scientific.net/AMR.31.4

Citation:

H. L. Kwok "Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer ", Advanced Materials Research, Vol. 31, pp. 4-6, 2008

Online since:

November 2007

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$35.00

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