Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer

Harry L. Kwok

doi:10.4028/www.scientific.net/AMR.31.4

Paper Titles

Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer
p.4

Surface Optical Waves in Semi-Infinite One-Dimensional Photonic Crystals Containing Alternating Layers of Positive and Negative Media
p.7

Titania/Ormosils Organic-Inorganic Hybrid Thin Films Doped with Azobenzene Small Molecules for Optical Switch Applications
p.11

Sol-Gel Fabrication of Low Temperature Organic-Inorganic Hybrid Film Patterns for Photonic Applications
p.14

Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes
p.17

Modulation of Three Dimensional Photonic Band Gap in Visible Region
p.20

Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy
p.23

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Charge Effect in Organic Field-Effect Transistors...

Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer

Abstract:

Hall measurement is an effective means to measure carrier density and mobility in metals and semiconductors. This work examined the carrier mobility determined in the accumulation layer of organic field-effect transistors (OFETS) and proposed a method to explain data taken from rubrene single-crystal devices. The model was used to extract information on the trap states and the properties of the transport layer at different temperature.