Effect of Seed Layers Prepared by Vertical Deposition Method on the Growth and Properties of Oriented Polycrystalline α-HgI2 Films

Lei Ma; Wei Guang Yang; Ya Li Wang; Gong Long Liu; Ke Tang; Lin Jun Wang; Wei Min Shi

doi:10.4028/www.scientific.net/AMR.311-313.1237

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 311-313Effect of Seed Layers Prepared by Vertical...

Effect of Seed Layers Prepared by Vertical Deposition Method on the Growth and Properties of Oriented Polycrystalline α-HgI₂ Films

Abstract:

Polycrystalline α-HgI₂ films have been grown through combining vertical deposition method with hot wall vapor phase deposition (HWPVD) method. The influence of the α-HgI₂ seed layers on the structural and electrical properties of the polycrystalline α-HgI₂ films was investigated. It is found that the α-HgI₂ seed layers play an important role in reducing the grain sizes, increasing the density improving the crystallographic orientation and electrical properties of the polycrystalline α-HgI₂ films.

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Advanced Materials Research (Volumes 311-313)

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1237-1241

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https://doi.org/10.4028/www.scientific.net/AMR.311-313.1237

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August 2011

Authors:

Lei Ma, Wei Guang Yang, Ya Li Wang, Gong Long Liu, Ke Tang, Lin Jun Wang, Wei Min Shi

Keywords:

Polycrystalline, Seed Layers, Vertical Deposition Method

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