Effect of Seed Layers Prepared by Vertical Deposition Method on the Growth and Properties of Oriented Polycrystalline α-HgI2 Films

Abstract:

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Polycrystalline α-HgI2 films have been grown through combining vertical deposition method with hot wall vapor phase deposition (HWPVD) method. The influence of the α-HgI2 seed layers on the structural and electrical properties of the polycrystalline α-HgI2 films was investigated. It is found that the α-HgI2 seed layers play an important role in reducing the grain sizes, increasing the density improving the crystallographic orientation and electrical properties of the polycrystalline α-HgI2 films.

Info:

Periodical:

Advanced Materials Research (Volumes 311-313)

Edited by:

Zhongning Guo

Pages:

1237-1241

DOI:

10.4028/www.scientific.net/AMR.311-313.1237

Citation:

L. Ma et al., "Effect of Seed Layers Prepared by Vertical Deposition Method on the Growth and Properties of Oriented Polycrystalline α-HgI2 Films", Advanced Materials Research, Vols. 311-313, pp. 1237-1241, 2011

Online since:

August 2011

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Price:

$35.00

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