Surface Channel Hot-Carrier Effect on CLC n-TFTs

Abstract:

The deterioration of continuous-wave green laser-crystallized (CLC) single-grainlike polycrystalline silicon n-channel thin-film transistors (poly-Si n-TFTs) under surface channel hot-carrier (CHC) stress (VDS=16 V and VGS=16 V labeled as a CHC-1 stress) was studied. The electrical properties of trap states containing interface trap states of gate oxide and poly-Si channel and grain boundary trap states were characterized by capacitance-voltage (C-V) measurement. In addition, while a higher stress voltage, CHC-2 stress at VDS=18 V and VGS=18 V, was adopted, the increase of interface trapped charges was obviously observed.

• Periodical: Advanced Materials Research (Volumes 314-316)
• Pages: 1881-1884
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.314-316.1881
• Online since: August 2011
• Authors: Mu Chun Wang, Hsin Chia Yang
• Keywords: Annealing, Channel Hot Carrier, CLC, Interface Trap States, Reliability, TFT

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