Single Femtosecond Laser Pulse Irradiation of Silicon on Different Crystallographic Facet Planes

Abstract:

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Experiment on ablation of silicon wafer on different crystallographic facet planes by single laser pulse irradiation was carried out with a femtosecond pulsed laser operating at a wavelength of 780 nm and a pulse width of 160 fs. The quality and morphology of the laser ablated silicon surface were evaluated by atomic force microscopy. The ablation threshold fluences on different crystallographic facet planes were obtained through the relationship between the squared diameter of the craters and pulse energy. The effects of different crystallographic facet planes of silicon wafer on the process of femtosecond laser ablation of silicon wafer were studied.

Info:

Periodical:

Advanced Materials Research (Volumes 314-316)

Edited by:

Jian Gao

Pages:

1885-1888

DOI:

10.4028/www.scientific.net/AMR.314-316.1885

Citation:

L. T. Qi "Single Femtosecond Laser Pulse Irradiation of Silicon on Different Crystallographic Facet Planes", Advanced Materials Research, Vols. 314-316, pp. 1885-1888, 2011

Online since:

August 2011

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$35.00

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