Paper Title:
Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor
  Abstract

The method of evaluation of VDMOS storage failure rate is presented and explained in this paper. To obtain a large number of devices working hours in a short time, the accelerated factor k is brought into the failure rate test, from which the test time can be reduced to 1/k. In this paper, the failure rate test of VDMOS is carried out at 270 °C about 1500 hours with the accelerator factor k=21.73079. The storage lifetime of VDMOS was calculated over 10 years. The key parameters have been measured and reliability of VDMOS in ten years storage time has been evaluated.

  Info
Periodical
Advanced Materials Research (Volumes 317-319)
Chapter
Microelectronic Technology
Edited by
Xin Chen
Pages
1149-1152
DOI
10.4028/www.scientific.net/AMR.317-319.1149
Citation
N. Wan, C. S. Guo, S. W. Feng, G. C. Zhang, Z. Zhou, "Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor", Advanced Materials Research, Vols. 317-319, pp. 1149-1152, 2011
Online since
August 2011
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Mu Chun Wang, Hsin Chia Yang
Laser Processing Technology
Abstract:Continuous-wave green laser-crystallized (CLC) single-grainlike polycrystalline silicon n-channel thin-film transistors (poly-Si n-TFTs)...
1926
Authors: Cheng Gao, Min Jiang, Jiao Ying Huang, Xiang Fen Wang
Chapter 4: Mechatronics and Information
Abstract:In accelerated degradation test, it is essential to establish a suitable degradation path model of the component. In order to predict the...
2205
Authors: Lee J. Woodend, Peter M. Gammon, Vishal A. Shah, Amador Pérez-Tomás, Fan Li, Dean P. Hamilton, Maksym Myronov, Philip A. Mawby
5.2: MOSFETs
Abstract:Two commercial 1.2 kV SiC MOSFETs have been extensively characterised from 30 to 320 K. The temperature dependence of their I/V...
557