Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor

Ning Wan; Chun Sheng Guo; Shi Wei Feng; Guang Chen Zhang; Zhou Zhou

doi:10.4028/www.scientific.net/AMR.317-319.1149

Paper Titles

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The Digital Quality Evaluation System of Elbow Flowmeter
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Planar Hall Effect Ring Sensors for High Field-Sensitivity
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Design of a High Precision Integrated Charge Detection Circuit Based on Quartz Gyroscope
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Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor
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RFID-Based Thermal Bubble Non-Floating Type Accelerometer with Semi-Cylindrical Chamber and Filled with Xenon Gas
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Research on the Automatic Synchronization Control of Marine Power Station
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An Analytic Model for Electron Mobility in Strained Si/Si_1-xGe_x nMOSFETs
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An Algorithm of 3-D ADI-R-FDTD Based on Non-Zero Divergence Relationship
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 317-319Evaluation of VDMOS Storage Failure Rate Based on...

Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor

Abstract:

The method of evaluation of VDMOS storage failure rate is presented and explained in this paper. To obtain a large number of devices working hours in a short time, the accelerated factor k is brought into the failure rate test, from which the test time can be reduced to 1/k. In this paper, the failure rate test of VDMOS is carried out at 270 °C about 1500 hours with the accelerator factor k=21.73079. The storage lifetime of VDMOS was calculated over 10 years. The key parameters have been measured and reliability of VDMOS in ten years storage time has been evaluated.