Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor

Abstract:

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The method of evaluation of VDMOS storage failure rate is presented and explained in this paper. To obtain a large number of devices working hours in a short time, the accelerated factor k is brought into the failure rate test, from which the test time can be reduced to 1/k. In this paper, the failure rate test of VDMOS is carried out at 270 °C about 1500 hours with the accelerator factor k=21.73079. The storage lifetime of VDMOS was calculated over 10 years. The key parameters have been measured and reliability of VDMOS in ten years storage time has been evaluated.

Info:

Periodical:

Advanced Materials Research (Volumes 317-319)

Edited by:

Xin Chen

Pages:

1149-1152

DOI:

10.4028/www.scientific.net/AMR.317-319.1149

Citation:

N. Wan et al., "Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor", Advanced Materials Research, Vols. 317-319, pp. 1149-1152, 2011

Online since:

August 2011

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Price:

$35.00

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