An Analytic Model for Electron Mobility in Strained Si/Si1-xGex nMOSFETs

Bin Li; Hong Xia Liu; Jin Li

doi:10.4028/www.scientific.net/AMR.317-319.1168

Paper Titles

Design of a High Precision Integrated Charge Detection Circuit Based on Quartz Gyroscope
p.1143

Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor
p.1149

RFID-Based Thermal Bubble Non-Floating Type Accelerometer with Semi-Cylindrical Chamber and Filled with Xenon Gas
p.1153

Research on the Automatic Synchronization Control of Marine Power Station
p.1163

An Analytic Model for Electron Mobility in Strained Si/Si_1-xGe_x nMOSFETs
p.1168

An Algorithm of 3-D ADI-R-FDTD Based on Non-Zero Divergence Relationship
p.1172

Ternary Logic Dynamic CMOS Comparators
p.1177

Impact of Ge-Profile in Base on SiGe pnp HBT’s Performance
p.1183

Study on Transmission Characteristics of Silicon-Based Microstrip Bandpass Filter
p.1187

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 317-319An Analytic Model for Electron Mobility in...

An Analytic Model for Electron Mobility in Strained Si/Si_1-xGe_x nMOSFETs

Abstract:

In order to describe electron transport properties in inversion layer of strained Si/Si1-xGex nMOSFETs, a new analytic electron mobility model is proposed. The model not only takes into account the effect of germanium(Ge) content on phonon scattering-limited mobility and surface roughness-limited mobility, and but also includes the degradation effect of strained Si film thickness and temperature on the device mobility. For various Ge content and a wide range of normal electric field, temperature and strained Si film thickness, the model provides good agreement with the experimental data in references. In addition, the model can be expressed using the analytical expression and can be easily included in the device simulator.

You might also be interested in these eBooks

Equipment Manufacturing Technology and Automation

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 317-319)

Pages:

1168-1171

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.317-319.1168

Citation:

Cite this paper

Online since:

August 2011

Authors:

Bin Li, Hong Xia Liu, Jin Li

Keywords:

Analytic Model, Electron Mobility, MOSFET, Strained Si/Si_1-XGe_X

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] F.M. Buffer and W. Fichtner: IEEE Trans. Electron Devices Vol.50 (2003), p.278

Google Scholar

[2] S.G. Badcock, A.G. O'Neill and E.G. Chester: Solid-State Electronics Vol.46 (2002), p.(1925)

Google Scholar

[3] J.B. Roldán and F. Gámiz: Solid-State Electronics Vol.48 (2004), p.1347

Google Scholar

[4] R.Liang, D. Li and J. Xu: Solid-State Electronics Vol.52 (2008), p.863

Google Scholar

[5] C. Lombardi, S. Manzini, A. Saporito and M. Vanzi: IEEE Trans. Computer-Aided Design Vol.7 (1988 ), p.1164

Google Scholar

[6] M.N. Darwish, J.L. Lentz, M. R.Pinto, P.M. Zeitzoff, T.J. Krutsick and H.H. Vuong: IEEE Trans. Electron Devices Vol.44 (1997), p.1164

DOI: 10.1109/16.622611

Google Scholar

[7] H. Miyata, T.Yamada and D. K. Ferry: Appl. Phys.Lett. Vol.62 (1993), p.2661

Google Scholar

[8] G. Abstreiter, H. Brugger and T. Wolf: Phys. Rev. Lett. Vol.54 (1985), p.2441

Google Scholar

[9] G. Masetti, M. Severi and S. Solmi: IEEE Transactions on Electron Devices Vol.30 (1983), p.764

Google Scholar

[10] T. Tezuka, S. Nakaharai, Y. Moriyama, N. Hirashita, N. Sugiyama, A. Tanabe, K. Usuda and S. Takagi: IEEE Trans. Electron Devices Vol.54 (2007), p.1249

DOI: 10.1109/ted.2007.893663

Google Scholar

[11] M.T. Currie, C.W. Leitz, T.A. Langdo, G. Taraschi, E. A. Eitzgerald and D. A. Antoniadis: J. Vac. Sci. Technol. B Vol.19 (2001), p.2268

Google Scholar

[12] S. Kim, T. Shim, K. Choi and J. Park: Semicond. Sci. Technol. Vol.24 (2009), p.035014.1

Google Scholar

[13] DESSIS-ISE Manual Ver. 10.0, ISE, 2004.

Google Scholar