An Analytic Model for Electron Mobility in Strained Si/Si1-xGex nMOSFETs

Abstract:

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In order to describe electron transport properties in inversion layer of strained Si/Si1-xGex nMOSFETs, a new analytic electron mobility model is proposed. The model not only takes into account the effect of germanium(Ge) content on phonon scattering-limited mobility and surface roughness-limited mobility, and but also includes the degradation effect of strained Si film thickness and temperature on the device mobility. For various Ge content and a wide range of normal electric field, temperature and strained Si film thickness, the model provides good agreement with the experimental data in references. In addition, the model can be expressed using the analytical expression and can be easily included in the device simulator.

Info:

Periodical:

Advanced Materials Research (Volumes 317-319)

Edited by:

Xin Chen

Pages:

1168-1171

DOI:

10.4028/www.scientific.net/AMR.317-319.1168

Citation:

B. Li et al., "An Analytic Model for Electron Mobility in Strained Si/Si1-xGex nMOSFETs", Advanced Materials Research, Vols. 317-319, pp. 1168-1171, 2011

Online since:

August 2011

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Price:

$35.00

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