Study on Transmission Characteristics of Silicon-Based Microstrip Bandpass Filter
With the development of semiconductor process technology and IC design technology, silicon-based filter technology continuously improved. The filter’s transmission characteristics depend on the dielectric constant, dielectric loss and substrate thickness. This paper studies the frequency response characteristics of transmission coefficient and reflection coefficient of the parallel coupled microstrip bandpass filter, in the condition of silicon-based with different thickness, loss and doped concentration, when the center frequency is 5.75 GHz.
Y. F. Peng et al., "Study on Transmission Characteristics of Silicon-Based Microstrip Bandpass Filter", Advanced Materials Research, Vols. 317-319, pp. 1187-1190, 2011