Impact of Ge-Profile in Base on SiGe pnp HBT’s Performance

Li Li; Hong Xia Liu

doi:10.4028/www.scientific.net/AMR.317-319.1183

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 317-319Impact of Ge-Profile in Base on SiGe pnp HBT’s...

Impact of Ge-Profile in Base on SiGe pnp HBT’s Performance

Abstract:

SiGe heterojunction structure much improves the performance of PnP HBT (heterojunction bipolar transistor), which focus on the impact of Ge component distribution in the base on the current gain and characteristic frequency . The triangular distribution in the base, including zero-doping and non-zero-doping at the starting point, will form a Ge-gradient acceleration filed for the minority carriers in the base to reduce the base transport time and increase current density and working frequency. Extend Ge to the collector region to eliminate the effect of the valence band spike barrier at the collector junction, further improving the performance of the pnp HBT. By the simulations and optimizations in this paper, the and of pnp SiGe HBT improves evidently, and the results can be referenced in the design of SiGe devices and circuits.

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Periodical:

Advanced Materials Research (Volumes 317-319)

Pages:

1183-1186

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.317-319.1183

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Online since:

August 2011

Authors:

Li Li, Hong Xia Liu

Keywords:

Characteristic Frequency F_T, Current Gain β, SiGe PNP HBT, Triangular Distribution

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