Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates

Elias Haddad; Christian Martin; Charles Joubert; Bruno Allard; Maher Soueidan; Mihai Lazar; Cyril Buttay; Beatrice Payet-Gervy

doi:10.4028/www.scientific.net/AMR.324.294

Paper Titles

High Frequency Ultrasound, a Tool for Elastic Properties Measurement of Thin Films Fabricated on Silicon
p.277

The Low-Lying Excited Electronic States of an Alkali-Earth Compounds
p.282

Magnetic Behavior of Barium Hexaferrite Nanoparticles
p.286

Determination of Initial Magnetic Permeability of YIG Thin Films Using the Current Sheet Method
p.290

Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates
p.294

Dielectric Properties and Raman Spectroscopy in Ca-Substituted Na_0.5Bi_0.5TiO₃ Ferroelectric Ceramics
p.298

On the Characterization of Ultra Thin Al Films Deposited onto SiC Substrate Using PIXE Technique
p.302

Compositional Microanalysis of the Obtained Copper Silicide from an Annealed Ternary System Cu/Au/Si by Standard RBS, Microprobe PIXE, XRD and EDS
p.306

RBS Study of Multilayer Structure Material of Si/SiO₂ Nano Films
p.310

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Modeling, Fabrication, and Characterization of...

Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates

Abstract:

This paper presents the design, fabrication, and characterization of micro planar inductors on a microwave magnetic material (YIG). Planar spiral inductors were designed for monolithic DC-DC converters in System-In-Package with 100 MHz switching frequency (1 W, V_in= 3.6 V, V_out= 1 V). A microwave magnetic substrate (YIG) serves as mechanical support, and also presents a double purpose by increasing inductance value and reducing electromagnetic interferences (EMI). This last point is critical to improve the behavior of a switching mode power supply (SMPS). In order to obtain an optimal design for the inductor, geometrical parameters were studied using Flux2D simulator and an optimized 30 to 40 nH spiral inductor with expected 25 mΩ R_DC, 3 mm² footprint area was designed. Subsequently, samples have been fabricated by electroplating technique, and tested using a vector network analyzer in the 10 MHz to 100 MHz frequency range. Results were then compared to the predicted response of simulated equivalent model.

You might also be interested in these eBooks

Advances in Innovative Materials and Applications

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 324)

Pages:

294-297

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.324.294

Citation:

Cite this paper

Online since:

August 2011

Authors:

Elias Haddad, Christian Martin, Charles Joubert, Bruno Allard, Maher Soueidan, Mihai Lazar, Cyril Buttay, Beatrice Payet-Gervy

Keywords:

Copper Electroplating, DC-DC Power Conversion, Magnetic Material, Passive Components, Planar Inductors

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] S. Musunuri, P. L. Chapman, Optimization issues for fully-integrated CMOS dc-dc converters: Proc. Conf. Record IEEE Industrial Applications Society Annu. Conf. (2002) 2405–2410.

DOI: 10.1109/ias.2002.1042782

Google Scholar

[2] C. Martin, B. Allard, D. Tournier, M. Soueidan, J.-J. Rousseau, D. Allessem, L. Menager, V. Bley, J. -Y. Lembeye, Planar inductors for high frequency dc-dc converters using microwave magnetic material: IEEE ECCE. (2009) 1890-1894.

DOI: 10.1109/ecce.2009.5316363

Google Scholar

[3] B. Razavi: IEEE Journal Solid-State Circuits. Vol. 34 no. 3 (1999), 268.

Google Scholar

[4] J. N. Burghartz, M. Soyuer: IEEE Trans. Electron Devices. Vol. 43 no. 9 (1996), 1559.

Google Scholar

[5] Cedrat group, Flux2D/3D user guide, information on http://www.cedrat.com, Myelan, France.

Google Scholar

[6] E. M. Freeman, MagNet 5 user guide: Using the MagNet version 5, Infolytica Corp., Montreal.

Google Scholar

[7] C. P. Yue, S. S. Wong: Physical modeling of spiral inductors on silicon: IEEE Trans. Electron Dev. Vol. 47, no. 3, (2000) 560–568.

DOI: 10.1109/16.824729

Google Scholar

[8] B. Orlando, R. Hida, R. Cuchet, M. Audoin, B. Viala, D. Pellissier-Tanon,X. Gagnard, and P. Ancey, Low-resistance integrated toroidal inductor for power management: IEEE Trans. On Magnetics, Vol. 42, no.10, (2006), 3374-3376.

DOI: 10.1109/tmag.2006.879571

Google Scholar