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DC Characterization of Different Advanced MOSFET Architectures

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Abstract:

A review of recent results concerning the DC characterization of FD- and Double Gate SOI MOSFET’s and FinFETs in modern CMOS technologies is given. By proper extraction techniques, distinction between the different interaction mechanisms is done. Parameter extraction conducted at room and low temperature clearly indicates that the mobility is directly impacted by shrinking the gate length in sub 100nm architectures.

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Periodical:

Advanced Materials Research (Volume 324)

Pages:

407-410

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.324.407

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Cite this paper

Online since:

August 2011

Authors:

Jalal Jomaah, Majida Fadlallah, Gérard Ghibaudo

Keywords:

CMOS, DC Characterization, Double-Gate, FinFET, MOS - Transistor, Short-Channel, SOI, Triple-Gate

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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