DC Characterization of Different Advanced MOSFET Architectures

Abstract:

Article Preview

A review of recent results concerning the DC characterization of FD- and Double Gate SOI MOSFET’s and FinFETs in modern CMOS technologies is given. By proper extraction techniques, distinction between the different interaction mechanisms is done. Parameter extraction conducted at room and low temperature clearly indicates that the mobility is directly impacted by shrinking the gate length in sub 100nm architectures.

Info:

Periodical:

Edited by:

Maher Soueidan, Mohamad Roumié and Pierre Masri

Pages:

407-410

DOI:

10.4028/www.scientific.net/AMR.324.407

Citation:

J. Jomaah et al., "DC Characterization of Different Advanced MOSFET Architectures", Advanced Materials Research, Vol. 324, pp. 407-410, 2011

Online since:

August 2011

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Price:

$35.00

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