Characterization and Aging Test Methodology for Power Electronic Devices at High Temperature

Ali Ibrahim; Zoubir Khatir; Laurent Dupont

doi:10.4028/www.scientific.net/AMR.324.411

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Characterization and Aging Test Methodology for...

Characterization and Aging Test Methodology for Power Electronic Devices at High Temperature

Abstract:

Power electronic modules are key elements in the chain of power conversion. The application areas include aerospace, aviation, railway, electrical distribution, automotive, home automation, oil industry ... But the use of power electronics in high temperature environments is a major strategic issue in the coming years especially in transport. However, the active components based on silicon are limited in their applications and not suitable for those require both high voltages and high ambient temperatures. The materials with wide energy gap like SiC, GaN and diamond, have the advantage of being able to exceed these limits [1,2]. These materials seem adequate to extremely harsh temperature environments and allow the reduction of cooling systems, but also the increasing of switching frequency.

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Periodical:

Advanced Materials Research (Volume 324)

Pages:

411-414

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.324.411

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Online since:

August 2011

Authors:

Ali Ibrahim, Zoubir Khatir, Laurent Dupont

Keywords:

Aging, Failure Mode, Power Eletronics, Reliability, Silicon Carbide (SiC)

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References

[1] Rump Session « SiC, GaN state of the art », ICSCRM'07, Kyoto, Japan, october 14-19, 2007.

Google Scholar

[2] J.M Homberger, S.D. Mounce, R.M. Schupbach; A.B. Lostetter and H.A. Mantooth in, High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications," Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005 , vol.1, no., pp.393-398 Vol. 1, 2-6 Oct. 2005 High-Temperature Silicon Carbide (SiC) Power

DOI: 10.1109/ias.2005.1518338

Google Scholar

[3] Z. Khatir, L. Dupont and A. Ibrahim, in Investigations on junction temperature estimation based on junction voltage measurements, Microelectronics reliability (2010)

DOI: 10.1016/j.microrel.2010.07.102

Google Scholar

[4] Th. Detzel, M. Glavanovics and K. Weber, in Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions, Microelectronics Reliability Vol 44 (2004), pp.422-428.

DOI: 10.1016/j.microrel.2004.07.044

Google Scholar

[5] M. Arab, S. Lefebvre, Z. Khatir and S. Bontemps in, Experimental Investigations of Trench Field Stop IGBT under Repetitive Short-Circuits Operations, Power Electronics Specialists Conference, 2008. PESC 2008. IEEE , vol., no., pp.4355-4360, 15-19 June (2008)

DOI: 10.1109/pesc.2008.4592645

Google Scholar