Side Gate Graphene and AlGaN/GaN Unipolar Nanoelectronic Devices

Abstract:

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Three-terminal junction devices were realized in graphene grown heteroepitaxially on semiinsulating silicon carbide as well as in AlGaN/GaN heterostructures grown by MOCVD on sapphire containing a two dimensional electron gas. These nanoelectronic devices were fabricated using electron beam lithography. In both types of heterostructures room temperature electrical measurements revealed a pronounced nonlinear electrical behavior of the fabricated nanoelectronic devices. The obtained voltage rectification at room temperature demonstrates the feasibility of func-tional three-terminal junctions in heterostructures consisting of types of high carrier mobility struc-tures than classical III-V semiconductor heterostructures.

Info:

Periodical:

Edited by:

Maher Soueidan, Mohamad Roumié and Pierre Masri

Pages:

427-430

DOI:

10.4028/www.scientific.net/AMR.324.427

Citation:

R. Göckeritz et al., "Side Gate Graphene and AlGaN/GaN Unipolar Nanoelectronic Devices", Advanced Materials Research, Vol. 324, pp. 427-430, 2011

Online since:

August 2011

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Price:

$35.00

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