Side Gate Graphene and AlGaN/GaN Unipolar Nanoelectronic Devices

Abstract:

Three-terminal junction devices were realized in graphene grown heteroepitaxially on semiinsulating silicon carbide as well as in AlGaN/GaN heterostructures grown by MOCVD on sapphire containing a two dimensional electron gas. These nanoelectronic devices were fabricated using electron beam lithography. In both types of heterostructures room temperature electrical measurements revealed a pronounced nonlinear electrical behavior of the fabricated nanoelectronic devices. The obtained voltage rectification at room temperature demonstrates the feasibility of func-tional three-terminal junctions in heterostructures consisting of types of high carrier mobility struc-tures than classical III-V semiconductor heterostructures.

• Periodical: Advanced Materials Research (Volume 324)
• Pages: 427-430
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.324.427
• Online since: August 2011
• Authors: Robert Göckeritz, Katja Tonisch, Wael Jatal, Lars Hiller, Frank Schwierz, Joerg Pezoldt
• Keywords: AlGaN, Gallium Nitride (GaN), Graphen, Heteroepitaxy, Nanoelectronics, Nanostructure

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