Low Frequency Noise Analysis in Advanced CMOS Devices

Article Preview

Abstract:

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

441-444

Citation:

Online since:

August 2011

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2011 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] L. Zafari et. al. Solid State Electronics, vol.51, n°2, (2007), 292-295.

Google Scholar

[2] K. Hung, et. al. IEEE Trans Electron Devices, 37, (1990), 654.

Google Scholar

[3] G. Ghibaudo et. al. Phys. Stat. Sol. (a), 124, (1991), 571.

Google Scholar

[4] A. McWhorter, in "SC Surf. Phys.", Univ. of Pennsylvania Press, Philadelphia, (1957), 207.

Google Scholar

[5] S. Christensson et. al. Sol State Electron, 11, (1968), 797.

Google Scholar

[6] F. Hooge, Physica, 83B, (1976), 14.

Google Scholar

[7] R. Jindal et. al. J. Appl. Phys., 52, (1981), 2884.

Google Scholar

[8] C.M. Van Vliet, Proc. ICNF (1990), 128.

Google Scholar

[9] I.M. Hafez et. al. Sol. State Electron, 33, (1990), 1525.

Google Scholar

[10] A. Cros et. al. Tech. Dig. – Int. Electron Devices Meet. (2006), 234.

Google Scholar

[11] L. Zafari et. al. J. Vac. Sci. Technol. A 27 (1), (2009), 402-405.

Google Scholar

[12] L. Zafari, et. al. Fluctuation and Noise Letters, 8, (2008), L99.

Google Scholar