Low Frequency Noise Analysis in Advanced CMOS Devices

Abstract:

Article Preview

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.

Info:

Periodical:

Edited by:

Maher Soueidan, Mohamad Roumié and Pierre Masri

Pages:

441-444

DOI:

10.4028/www.scientific.net/AMR.324.441

Citation:

J. Jomaah et al., "Low Frequency Noise Analysis in Advanced CMOS Devices", Advanced Materials Research, Vol. 324, pp. 441-444, 2011

Online since:

August 2011

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Price:

$35.00

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