Low Cost SU8 Based Above IC Process for High-Q RF Power Inductors Integration

Abstract:

This paper presents a new process for integration of high-Q RF power inductors above low resistivity silicon substrates. The process uses the SU8 resin as a dielectric layer. The aim of using the SU8 is to form thick dielectric layer that can enhance the performance of the inductors. The flexibility of the process enables the possibility to realize complex shaped planar inductors with various dielectric and metal thicknesses to meet the requirements of the application. Q values of 55 at 5 GHz has been demonstrated for an inductance value of 0.8 nH using a 60 µm thick SU8 layer and 30 µm thick copper ribbons.

• Periodical: Advanced Materials Research (Volume 324)
• Pages: 431-433
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.324.431
• Online since: August 2011
• Authors: Ayad Ghannam, David Bourrier, Christophe Viallon, Thierry Parra
• Keywords: Above-IC, Copper, Electroplating, High Q, Inductor, Negative Photoresist, Process, SU8

References

[1] A. Ghannam, et al., "Dielectric microwave characterization of the SU-8 thick resin used in an above IC process," in Microwave Conference, 2009. EuMC 2009, Rome, Italy, 2009, pp.1041-1044.

DOI: 10.23919/eumc.2009.5295989

[2] A. Ghannam, et al., "High-Q SU8 Based Above-IC Inductors for RF Power Devices," in Silicon Monolithic Integrated Circuits in RF Systems, 2011. SiRF 2011, Phoenix, AZ, USA, pp.25-28.

DOI: 10.1109/sirf.2011.5719307

[3] D. Bourrier, et al., "Comparison of new thick negative resist to Su8," in SPIE Advanced Lithography, SPIE 2011, San Jose, CA, USA

[4] Microchem SU8 datasheet, http://www.microchem.com/products/su_eight.htm