Defect-Related Photoluminescence from SiO2 Thin Films by Si-Ge Ions Doped

Abstract:

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Si and Ge ions are implanted into SiO2 thin films, subsequently the annealing treatment are carried out. The samples exhibit photoluminescence (PL) peaks at 400, 470, 550 and 780 nm. With the annealing temperature increasing, the intensity of 400-470 nm PL band increases remarkably. After oxidation annealing treatment, the intensity of 400-470 nm PL band decreases, and that of 550 nm and 780 nm PL peaks rises. Combing with the results of X-ray photoelectron spectroscopy(XPS), X-ray diffraction (XRD) and PL measurement, we propose that the PL peaks at 400 nm, 470 nm, 550 nm and 780 nm originate from ≡Ge−Si≡ center, ≡Si−Si≡ center, SPR center and GeO center, respectively.

Info:

Periodical:

Advanced Materials Research (Volumes 328-330)

Edited by:

Liangchi Zhang, Chunliang Zhang and Zichen Chen

Pages:

1153-1156

DOI:

10.4028/www.scientific.net/AMR.328-330.1153

Citation:

K. Zhong et al., "Defect-Related Photoluminescence from SiO2 Thin Films by Si-Ge Ions Doped", Advanced Materials Research, Vols. 328-330, pp. 1153-1156, 2011

Online since:

September 2011

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Price:

$35.00

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