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Structural and Optoelectrical Properties of Aluminum-Doped Zinc Oxide Thin Films for Organic Photovoltaic Cells
Abstract:
Thin films of transparent conducting aluminum-doped zinc oxide (ZnO:Al) were grown by rf magnetron sputtering technique using a sintered ceramic target of ZnAl2O4. The microstructure and optoelectrical properties of the deposited films were characterized wiyh XRD, four-point probe and spectrophotometer. The results show that the polycrystalline ZnO:Al films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the substrate temperature significantly affects the crystal structures and optoelectrical properties of the thin films. The ZnO:Al films deposited at the substrate temperature of 670 K has the relatively well crystallinity, the largest crystal grain, the highest transmittance and the highest figure of merit.
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532-535
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September 2011
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© 2011 Trans Tech Publications Ltd. All Rights Reserved
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