Structural and Optoelectrical Properties of Aluminum-Doped Zinc Oxide Thin Films for Organic Photovoltaic Cells

Abstract:

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Thin films of transparent conducting aluminum-doped zinc oxide (ZnO:Al) were grown by rf magnetron sputtering technique using a sintered ceramic target of ZnAl2O4. The microstructure and optoelectrical properties of the deposited films were characterized wiyh XRD, four-point probe and spectrophotometer. The results show that the polycrystalline ZnO:Al films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the substrate temperature significantly affects the crystal structures and optoelectrical properties of the thin films. The ZnO:Al films deposited at the substrate temperature of 670 K has the relatively well crystallinity, the largest crystal grain, the highest transmittance and the highest figure of merit.

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Periodical:

Edited by:

Prasad Yarlagadda, Yun-Hae Kim, Zhijiu Ai and Xiaodong Zhang

Pages:

532-535

DOI:

10.4028/www.scientific.net/AMR.337.532

Citation:

J.H. Gu et al., "Structural and Optoelectrical Properties of Aluminum-Doped Zinc Oxide Thin Films for Organic Photovoltaic Cells", Advanced Materials Research, Vol. 337, pp. 532-535, 2011

Online since:

September 2011

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$35.00

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