A Study on Structure and Electronic Properties of Single-Wall GaN Nanotubes

Li Bin Shi; Hong Kuan Yuan

doi:10.4028/www.scientific.net/AMR.347-353.3489

Paper Titles

Synthesis and Characterization of Nanometer Copper Ferrite by Auto-Combustion
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Effects of Vapor CdCl₂ Treatment on the Properties of CdS Thin Films Prepared by R.F. Magnetron Sputtering
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Investigation on Optical Properties of Transparent ITO Thin Films
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Preparation and Characterization of Nickel Nanopowder for Conductive Pastes
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A Study on Structure and Electronic Properties of Single-Wall GaN Nanotubes
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Current Distribution on the Electrode in 3-D Networks Lead-Acid Batteries
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Synthesis and Electrochemical Properties of LiNi_0.5Mn_0.5O₂ Cathode Materials by a Carbonate Co-Precipitation Method
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Improved Electrode Performance of LiFePO₄ by Using Li₃V₂(PO₄)₃ as an Additive
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Lithium-Ion Battery Anode Electrochemical Properties of Si/C Composites Using Graphite and Glucose as Carbon Source
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 347-353A Study on Structure and Electronic Properties of...

A Study on Structure and Electronic Properties of Single-Wall GaN Nanotubes

Abstract:

Using the first principle method based on density functional theory (DFT), we have studied the stability, structure, and electronic properties in (2 2), (3, 3), (4 4), (5 5), (6 6) armchair and (4 0), (5 0), (6 0) zigzag GaN nanotubes (GaN-NTs). In addition, the radius of N, Ga atoms, buckling separations, band gap and binding energy of (3 3) and (4 0) GaN-NTs in c-axis strain are investigated. We also explore the modification of density of states due to the strain along c-axis orientation. It is found that the strain can change conductive properties of (3 3) and (4 0) GaN-NTs.