Optical and Structural Characterizations of GaN Nanostructures

Leila Shekari; H. Abu Hassan; Z. Hassan

doi:10.4028/www.scientific.net/AMR.364.348

Paper Titles

The Fabrication of Ag Islands on AlN/GaN/AlN/Si(111) by Using Thermal Evaporator and Thermal Annealing Methods
p.327

Growth Mechanism of Au-Catalyzed Zno Nanowires: VLS or VS-VLS?
p.333

Preparation and Characterization of Carbon Nanotube-Based Electrochromic Material
p.338

Probing the pH Measurement of Self-Alligned Polysilicon Nanogap Capacitor
p.344

Optical and Structural Characterizations of GaN Nanostructures
p.348

Two Steps Synthesis of Quaternary Metal Titanate of Ba₂NiTi₅O₁₃ and Characterization
p.353

Temperature Effects on the Production of Carbon Nanotubes from Palm Oil by Thermal Chemical Vapor Deposition Method
p.359

Synthesis and Characterization of Zinc Phthalocyanine/Mesoporous Carbon Nitride Nanocomposites
p.363

Effect of Cao from Different Sources on the Nanostructured Cordierite
p.368

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 364Optical and Structural Characterizations of GaN...

Optical and Structural Characterizations of GaN Nanostructures

Abstract:

In this paper, we have grown high-quality wurtzite GaN nanowires (NWs) on polished <111> silicon (Si) either with or without gold (Au) as catalyst, by thermal evaporation using commercial GaN powder in an atmosphere of argon (Ar) gas. Optical and structural characterizations were performed using photoluminescence (PL), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and high resolution X-ray diffraction (HR-XRD). Structural characterizations indicate that the nanowires are of single-crystal hexagonal GaN. By using catalyst the growth location and diameters of the NWs can be controlled. The NWs on the Si are of higher density, and the compositional quality of the grown NWs on the Si substrate is of pure GaN as compare to the Au-coated substrate.