The Fabrication of Ag Islands on AlN/GaN/AlN/Si(111) by Using Thermal Evaporator and Thermal Annealing Methods

Abstract:

In this paper, we studied growth of AlN/GaN/AlN on Si (111) by using plasma assisted molecular beam epitaxy (PA-MBE) system. The structural and optical characteristics of the sample have been investigated by using high resolution X-ray diffraction (HR-XRD), Raman spectroscopy and photoluminescence (PL). PL spectrum of the sample has shown sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the sample. The silver (Ag) metal contact was then deposited on the sample followed by thermal treatment at 500°C and 700°C, respectively. Treated sample at 700°C showed good spherical Ag islands on sample compared to the treated sample at 500°C. The effect of Ag islands on the electrical characteristics of sample was also examined by using I-V measurement. The results showed that the treated sample at 700°C has decreased the photo-current of Schottky diode.

• Periodical: Advanced Materials Research (Volume 364)
• Pages: 327-332
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.364.327
• Online since: October 2011
• Authors: Mohd Zaki Mohd Yusoff, А. Mahyuddin, Hassan Zainuriah, Abu Hassan Haslan, Mat Johar Abdullah, Yushamdan Yusof
• Keywords: Ag Islands, Aluminum Nitride (AlN), III-Nitrides, MBE, Silver

References

[1] L.C. Chen, M.S. Fu, I.L. Huang: Jpn. J. Appl. Phys. 43 (2004), pp.3353-3355.

[2] H. Morkoc: Nitride Semiconductors and Devices (Springer, Heideberg, 1999).

[3] J. Chaudhuri, R. Thokala, J.H. Edgar and B. S. Sywe: J. Appl. Phys. 77 (1995), 6263.

[4] L.S. Chuah, Z. Hassan, H. Abu Hassan, N.M. Ahmed: J. Alloys & Compounds 481 (2009), p. L15-L19.

DOI: 10.1016/j.jallcom.2009.02.151

[5] L.S. Chuah, Z. Hassan, H. Abu Hassan, F.K. Yam, C.W. Chin, S.M. Thahab: International Journal of Modern Physics B (IJMPB), Vol. 22, No. 29 (2008), 5167-5173.

DOI: 10.1142/s0217979208048711

[6] X. Zhang, S.J. Chua, P. Li, K.B. Chong, Z.C. Feng: Appl. Phys. Lett. 74 (1999), (1984).

[7] L.S. Chuah, Z. Hassan, H. Abu Hassan, F.K. Yam, C. W. Chin, N. M. Ahmed: J. Optoelec. Advan. Mater. 10 (2008), pp.569-572.

[8] N. Grandjean N. and J. Massies: Mater. Sci. Eng., B 59 (1999), 39.

[9] Y.S. Kim, Y.H. Lee, K.M. Lim and M.Y. Sung: Appl. Phys. Lett. 74 (1999), 2800.

[10] N. Gaillard, L. Pinzalli, M. Gros-Jean and A. Bsiesy: Appl. Phys. Lett. 89 (2006), 133506.

[11] D. M. Schaadt, B. Feng, and E. T. Yu: Appl. Phys. Lett. 86 (2005), 063106.

[12] S. Xilian and S. Jianda: Appl. Surf. Sci. 253 (2006), 2093-(2095).