New Method for Improving the Electrical Characteristics of P-N Junction Diode
This paper investigates the effect of soft X-ray irradiation various energy and times on P-N junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.
Brendan Gan, Yu Gan and Y. Yu
I. Srithanachai et al., "New Method for Improving the Electrical Characteristics of P-N Junction Diode", Advanced Materials Research, Vols. 378-379, pp. 606-609, 2012