New Method for Improving the Electrical Characteristics of P-N Junction Diode

Abstract:

This paper investigates the effect of soft X-ray irradiation various energy and times on P-N junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.

• Periodical: Advanced Materials Research (Volumes 378-379)
• Pages: 606-609
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.378-379.606
• Online since: October 2011
• Authors: Itsara Srithanachai, Surada Ueamanapong, Amporn Poyai, Surasak Niemcharoen
• Keywords: Bulk Silicon, Series Resistance, Soft X-Ray Annealing

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