Study on the Perfect Dislocation in Cd0.9Zn0.1Te Single Crystals by HRTEM

Jie Sun; Li Fu

doi:10.4028/www.scientific.net/AMR.399-401.1175

Paper Titles

Preparation of RHA-Paraffin Phase Change Materials
p.1156

Effect of Rare Earth Composite Refiner Agent on Decolorization and Fining of the Floating Glasses
p.1160

Drug Release Characteristics of P(AA-co-DMAA)/SA Interpenetrating Polymer Network Hydrogels
p.1165

The Luminescence and Energy-Transfer of Ce³⁺, Tb³⁺ Activated Sr₃B₂O₆
p.1169

Study on the Perfect Dislocation in Cd_0.9Zn_0.1Te Single Crystals by HRTEM
p.1175

Synthesis, Photochromism Properties of a Novel Hybrid Diarylethene Based on Hydroxyl Group
p.1180

Research on Thermal Conductive and Insulating Material Based on Phosphoric Acid Adhesive
p.1184

Influence of Lime Dust on Chloride Binding Capacity of Fly Ash-Cement Paste
p.1191

Study on the Optimal Formula of Lubricant with Uniform Design
p.1196

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 399-401Study on the Perfect Dislocation in Cd0.9Zn0.1Te...

Study on the Perfect Dislocation in Cd_0.9Zn_0.1Te Single Crystals by HRTEM

Abstract:

Two types of 60° perfect dislocation in Cd_0.9Zn_0.1Te single crystals were observed by HRTEM. The Burger’s vector of the two dislocation were and respectively. With reasonable premise, the possible dissociation mechanisms of the two kinds of dislocations were supposed to be and . There are two kinds of the formation mechanisms, the first one is the accumulation of the point defects and the other kind of dislocation is the lattice gliding caused by the thermal stress.

You might also be interested in these eBooks

New Materials, Applications and Processes

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 399-401)

Pages:

1175-1179

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.399-401.1175

Citation:

Cite this paper

Online since:

November 2011

Authors:

Jie Sun, Li Fu

Keywords:

CdZnTe, Dissociation, HRTEM, Perfect Dislocation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Stéphane Ricq, Francis Glasser and Michel Garcin: Nucl. Instrum. Methods Phys. Res., Sect. A Vol. 442 (2000), p.45

Google Scholar

[2] Komar, A. Gektin, D. Nalivaiko, I. Klimenko, V. Migal, O. Panchuk and A. Rybka: Nucl. Instrum. Methods Phys. Res., Sect. A Vol. 458 (2001), p.113

DOI: 10.1016/s0168-9002(00)00856-1

Google Scholar

[3] A. Hossain, A.E. Bolotnikov, G.S. Camarda, Y. Cui, G. Yang, K-H. Kim, R. Gul, L. Xu and R.B. James: J. Cryst. Growth Vol. 312 (2010), p.1795

DOI: 10.1016/j.jcrysgro.2010.03.005

Google Scholar

[4] A. Carvalho, A. Tagantsev, S. Oberg, P.R. Briddon and N. Setter: Physica B Vol. 404 (2009), p.5019

Google Scholar

[5] Y.Q. Wu, H. Huang, and J. Zou: Scripta Mater. Vol. 65 (2011), p.392

Google Scholar

[6] Tao Wang, Wanqi Jie and Dongmei Zeng: Mater. Sci. Eng., A Vol. 472 (2008), p.227

Google Scholar

[7] Guoqiang Li, Shao-Ju Shih, Yizhong Huang, Tao Wang and Wanqi Jie: J. Cryst. Growth Vol. 311 (2008), p.85

Google Scholar

[8] Ken Durose: CdTe and related compounds: Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications (Elsevier, Netherlands 2010)

DOI: 10.1016/c2009-0-61369-6

Google Scholar

[9] Guoqiang Li, Xiaolu Zhang, Hui Hua and Wanqi Jie: J. Electron. Mater. Vol. 34 (2005), p.1215

Google Scholar

[10] Hans J. Scheel and Tsuguo Fukuda: Crystal Growth Technology (John Wiley & Sons, Ltd., 2003)

Google Scholar

[11] Guoqiang Li, Xiaolu Zhang, Wanqi Jie and Chun Hui: J. Cryst. Growth Vol. 295 (2006), p.31

Google Scholar

[12] Guoqiang Li, Wanqi Jie , Hui Hua and Zhi Gu: Prog. Cryst. Growth Charact Vol. 46 (2003), p.85

Google Scholar